Preparation method of SE-PERC solar cell with high conversion efficiency

A solar cell, high-conversion technology, applied in the field of solar cells, can solve the problems of easy exposure of PN junction, decreased cell conversion efficiency, and easy damage to the oxide layer, and achieves good passivation effect, conversion efficiency improvement, and cost reduction treatment. Effect

Inactive Publication Date: 2020-02-21
HENGDIAN GRP DMEGC MAGNETICS CO LTD
View PDF4 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the fact that the oxide layer in the heavily doped region is very easy to be damaged, and the PN junction of the heavily doped part is also easily exposed. When the b

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of SE-PERC solar cell with high conversion efficiency
  • Preparation method of SE-PERC solar cell with high conversion efficiency

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0042] Example 1: A method for preparing SE-PERC solar cells with high conversion efficiency, including the following preparation steps:

[0043] 1) Texturing: Select 1000 P-type 1-3Ω·cm silicon wafers to use 7wt% hydrogen peroxide to remove impurities such as oil, and then texturing in 3wt% sodium hydroxide solution and 1wt% sodium silicate solution. The texture is formed on the surface of the silicon wafer; then 7% HF solution and 10% HCL solution are used to remove impurities such as metal ions, cleaned and dried; after texturing, the weight loss of the silicon wafer is 0.5g, and the reflectance of the silicon wafer is 11% ;

[0044] 2) Phosphorus diffusion: the silicon wafer after texturing is subjected to phosphorus diffusion treatment, the square resistance of the processed silicon wafer is 110Ω / □, and the junction depth is 50nm;

[0045] 3) Heavy laser doping: Use the Dier laser machine to perform heavy laser doping on the diffused silicon wafer, and the square resistance of ...

Example Embodiment

[0060] Embodiment 2: A method for preparing a SE-PERC solar cell with high conversion efficiency, including the following preparation steps:

[0061] 1) Texturing: Select 1000 P-type 1-3Ω·cm silicon wafers to use 15wt% hydrogen peroxide to remove impurities such as oil, and then texturing in 1wt% sodium hydroxide solution and 2wt% sodium silicate solution. The texture is formed on the surface of the silicon wafer; then 9% HF solution and 13% HCL solution are used to remove impurities such as metal ions, cleaned and dried; the weight loss of the silicon wafer after texturing is 0.7g, and the reflectance of the silicon wafer is 9% ;

[0062] 2) Phosphorus diffusion: the silicon wafer after texturing is subjected to phosphorus diffusion treatment, the square resistance of the processed silicon wafer is 90Ω / □, and the junction depth is 10nm;

[0063] 3) Heavy laser doping: Use the Dier laser machine to perform heavy laser doping on the diffused silicon wafer, and the square resistance o...

Example Embodiment

[0078] Embodiment 3: A method for preparing a SE-PERC solar cell with high conversion efficiency, including the following preparation steps:

[0079] 1) Texturing: Choose 1000 P-type 1-3Ω·cm silicon wafers to use 5wt% hydrogen peroxide to remove oil and other impurities, and then use 5wt% sodium hydroxide solution and 3wt% sodium benzoate solution for texturing. The surface of the silicon wafer is textured; then 5% HF solution and 20% HCL solution are used to remove impurities such as metal ions, cleaned and dried; after texturing, the weight loss of the silicon wafer is 0.4g, and the reflectivity of the silicon wafer is 12%;

[0080] 2) Phosphorus diffusion: the silicon wafer after texturing is subjected to phosphorus diffusion treatment, the square resistance of the processed silicon wafer is 130Ω / □, and the junction depth is 30nm;

[0081] 3) Heavy laser doping: Use the Dier laser machine to perform heavy laser doping on the diffused silicon wafer, and the square resistance of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Square resistanceaaaaaaaaaa
Knot deepaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a preparation method of an SE-PERC solar cell with high conversion efficiency, and relates to the technical field of solar cells. The method comprises preparation steps of 1) texturing; 2) phosphorus diffusion; 3) laser heavy doping; 4) oxidation; (5) PSG removal; 6) alkali etching and polishing, carrying out alkali etching and polishing on a back surface of a silicon wafer; 7) removing the phosphorosilicate glass on a front surface of the silicon wafer; 8) annealing; 9) plating a double-sided aluminum oxide passivation film on a surface of the silicon wafer; 10) depositing an antireflection film on the front surface; 11) depositing a passivation film on a back surface; 12) performing back laser grooving; 13) silk-screen printing; and 14) sintering. The method is advantaged in that the alkali etching technology is utilized, compared with acid etching, the use amount of etching acid can be reduced, acid wastewater cost treatment is reduced, environmental protection is facilitated, an oxidation procedure is added after laser heavy doping and before PSG removal, PN junctions can be prevented from being damaged, the good passivation effect can be achieved on thesilicon wafer, and conversion efficiency is obviously improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a preparation method of a high conversion efficiency SE-PERC solar cell. Background technique [0002] PERC solar cells are currently one of the most mainstream high-efficiency cells on the market. Among them, the SE-PERC battery is a laser heavy doping technology (SE) process added on the basis of PERC, which realizes the selective doping of solar cells. Combining the front laser heavy doping technology (SE) with fine grid lines improves the passivation effect and significantly increases the open circuit voltage, thus greatly improving the conversion efficiency of solar cells. One of the existing SE-PERC solar energy preparation methods is alkali etching and back polishing, and its preparation process is: texturing-diffusion-laser doping-removing back silicon-phosphorus glass-back alkali etching polishing-removing front-side silicon-phosphorus glass-annealing - Aluminum ox...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18H01L21/306
CPCH01L21/30604H01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 刘杰陈健生
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap