161results about How to "Low cost processing" patented technology

A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.

The present invention is directed to a system and method in which real-time ubiquitous imaging is feasible in local areas, such as inside a clinic, hospital room or doctor office. This is achieved by designing a wireless network having a central processing server with, for example, distributed broadband acquisition and video bus capability. Remote access is possible using store-and-forward image transfer over a wide area network. With these capabilities, a physician can use a handheld transducer (such as an ultrasound transducer) as a basic tool to facilitate diagnostic decisions similar to the way a stethoscope is used today.

An ultrasound imaging system with pixel oriented processing is provided in which a method of producing a Doppler velocity image is accomplished by emitting unfocused acoustic signals into a medium over substantially an entire field; receiving scattered and reflected ultrasonic signals on a transducer array in response to the emission; processing the received ultrasonic signals to extract information to construct a Doppler velocity signal corresponding to at least one point in the medium; and generating on a display device the Doppler velocity image from the processed Doppler velocity signal. Acquisition sequences and signal processing algorithms are described that provide improved quantification of fluid flow parameters, including improved discrimination between regions of blood flow and tissue. Very high frame rate Spectral Doppler and Vector Doppler acquisition modes for real-time and post-acquisition visualization over a large field of view are described.

An ultrasound imaging system with pixel oriented processing is provided in which an acoustic signal is generated, echoes from the acoustic signal are received at a plurality of receiving elements to obtain echo signals that are then stored, a given pixel is mapped into a region of the stored signals, the mapped region of the stored echo signals is organized into array for the given pixel after which the array is processed to generate a signal response for the given pixel to obtain acoustic information for the given pixel. The system can be implemented entirely on plug-in cards for a commercial PC motherboard. The system and method can be implemented for pixel-oriented or voxel-oriented image processing and display, eliminating intermediate data computations and enabling extensive use of software processing methods. Advantages include improved acquisition of signal dynamic range, flexible acquisition modes for high frame rate 2D, 3D, and Doppler blood flow imaging.

A method is disclosed for fabricating a integrated device, such as a MEMS device. A first wafer is provided on an exposed surface with a layer of gold, gold alloy or gold compound. A second wafer is provided on its exposed surface with under-layer of gold, gold alloy or gold compound; and an over- of bismuth, bismuth alloy, a compound of bismuth, cadmium, cadmium alloy, a compound of cadmium compound, tin, tin alloy, or a compound of tin. The wafers are then brought into contact and bonded at their surfaces through the deposited layers.

A thermal fluid flow sensor and method of forming same. The flow sensor has an integrated circuit substrate, such as a silicon substrate, and a region of low thermal conductivity material carried on the top surface of the integrated circuit substrate. One or more pairs of temperature sensing elements are disposed on the low thermal conductivity region together with a heating element so that a robust flow sensor can be provided at low cost. Signal conditioning circuitry is disposed on the same surface as the temperature sensing elements and connected to the sensing elements thereby further reducing costs and improving the flow sensor sensitivity.

A method and apparatus for adjusting the contrast of an input image is disclosed. Brightness level data of the input image is filtered to obtain at least a low frequency component and a high frequency component. The high frequency component is amplified. The low frequency component and the amplified high frequency component are summed to produce brightness level data of the output image. The filtering is carried out by at least one recursive infinite impulse response filter having a single delay coefficient that is adaptive to areas of high contrast in the input image.

A method of making an inorganic light emitting layer includes combining a solvent for semiconductor nanoparticle growth, a solution of core/shell quantum dots, and semiconductor nanoparticle precursor(s); growing semiconductor nanoparticles to form a crude solution of core/shell quantum dots, semiconductor nanoparticles, and semiconductor nanoparticles that are connected to the core/shell quantum dots; forming a single colloidal dispersion of core/shell quantum dots, semiconductor nanoparticles, and semiconductor nanoparticles that are connected to the core/shell quantum dots; depositing the colloidal dispersion to form a film; and annealing the film to form the inorganic light emitting layer.

The invention relates to denitrification acinetobacters and a use thereof, and belongs to the field of environmental microbiology. The denitrification acinetobacters have a category name of Acinetobacter schindleri LN5, are preserved in the China general microbiological culture collection center of the China microbiological preservation management committee on May 30th, 2012, and has a preservation number of CGMCC No.6165. The denitrification acinetobacters have heterotrophic nitrification-aerobic denitrification functions, have high aureomycin resistance, can be used for simultaneous nitrification and denitrification (SND) treatment on nitrogen-containing sewage and especially on nitrogen and aureomycin-containing sewage, realize removal of a large part of ammonia nitrogen in nitrogen-containing sewage, realize small accumulation amounts of nitrite and nitrate nitrogen, realize nitrification-denitrification and COD removal in the same reactor, and realize environmentally-friendly, low-consumption and high-efficiency treatment on nitrogen-containing sewage.

An epoxy resin composition having components (A), (B), (C), and (D), wherein the epoxy resin composition has a viscosity at 40° C. of about 1×10³ to about 1×10⁴ Pa·s, a curing start temperature of about 90 to about 110° C., and a minimum viscosity at the curing start temperature of about 2 to about 20 Pa·s, wherein the components (A), (B), (C), and (D) are as follows: (A) About 60 weight parts or more of a tetraglycidyl amine type epoxy resin per 100 weight parts of the epoxy resin blend; (B) Dicyandiamide; (C) Diaminodiphenyl sulfone and (D) Urea compound.

A system and method for analyzing and managing business performance by designing and evaluating the performance of a business process model comprising a flow of business tasks and artifact sources that generate business artifacts. Business processes may be parsed to identify transformation opportunities meeting transformation conditions specified in a transformation knowledge. One or more identified transformation opportunities may be adopted, and parts of the process may be transformed according to transformation rules specified in a transformation knowledge. Analytics and computer simulation may be employed to evaluate business performance metrics of each of said transformed business processes. Iterative changes may be made to said business processes to manage business performance, reiterating transformation and evaluation steps until a satisfactory business process model is obtained. The resulting output is finally produced as a business process model in machine-readable format and can be deployed to a business environment.

An electrochromic device, comprising a first electrode (3), a second electrode (5) and an electrolyte (4) separating the electrodes (3, 5), where at least one of said first and second electrodes includes an electrically active structure which have an at least dual state visual appearance depending on the potential difference between the first and the second electrode.

A high voltage bipolar transistor with shallow trench isolation (STI) comprises the areas of a collector formed by implanting first electric type impurities into active area and connected with pseudo buried layers at two sides; Pseudo buried layers which are formed by implanting high dose first type impurity through the bottoms of STI at two sides if active area, and do not touch directly; deep contact through field oxide to contact pseudo buried layers and pick up the collectors; a base deposited on the collector by epitaxial growth and in-situ doped by second electric type impurity, in which the intrinsic base touches local collector and extrinsic base is used for base pick-up; a emitter which is a polysilicon layer deposited on the intrinsic base and doped with first electric type impurities. This invention makes the depletion region of collector/base junction from 1D (vertical) distribution to 2D (vertical and lateral) distribution. The bipolar transistor's breakdown voltages are increased by only enlarge active critical dimension (CD). This is low-cost process.

The invention discloses a preparation method of an SE-PERC solar cell with high conversion efficiency, and relates to the technical field of solar cells. The method comprises preparation steps of 1) texturing; 2) phosphorus diffusion; 3) laser heavy doping; 4) oxidation; (5) PSG removal; 6) alkali etching and polishing, carrying out alkali etching and polishing on a back surface of a silicon wafer; 7) removing the phosphorosilicate glass on a front surface of the silicon wafer; 8) annealing; 9) plating a double-sided aluminum oxide passivation film on a surface of the silicon wafer; 10) depositing an antireflection film on the front surface; 11) depositing a passivation film on a back surface; 12) performing back laser grooving; 13) silk-screen printing; and 14) sintering. The method is advantaged in that the alkali etching technology is utilized, compared with acid etching, the use amount of etching acid can be reduced, acid wastewater cost treatment is reduced, environmental protection is facilitated, an oxidation procedure is added after laser heavy doping and before PSG removal, PN junctions can be prevented from being damaged, the good passivation effect can be achieved on thesilicon wafer, and conversion efficiency is obviously improved.