Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of 3D flexible tin disulfide/graphene gas sensor for nitrogen dioxide detection

A gas sensor and nitrogen dioxide technology, applied in instruments, measuring devices, scientific instruments, etc., to achieve the effect of improving the overall detection performance and reducing the resistance value of the device

Pending Publication Date: 2020-02-28
HUIZHOU LEADAO ELECTRONICS MATERIAL
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to solve the need for high sensitivity, high selectivity, high reliability and can be used at normal temperature NO 2 gas sensor issues, while providing a NO 2 Detected 3D flexible tin disulfide / graphene (SnS 2 / RGO) preparation method of gas sensor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of 3D flexible tin disulfide/graphene gas sensor for nitrogen dioxide detection
  • Preparation method of 3D flexible tin disulfide/graphene gas sensor for nitrogen dioxide detection
  • Preparation method of 3D flexible tin disulfide/graphene gas sensor for nitrogen dioxide detection

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] 3D Flexible SnS 2 Preparation of / RGO gas sensor:

[0053] (1) 3D SnS 2 / Preparation of RGO

[0054] Under continuous stirring conditions, add 0.30g of thioacetamide and 0.35g of tin chloride pentahydrate into 20mL of graphene oxide solution with a concentration of 0.2mg / mL, and the resulting mixture is ultrasonically dissolved and then transferred to a reaction kettle at 180°C After heating for 11 h, the resulting product was centrifuged and washed with deionized water to obtain solid SnS 2 / RGO product.

[0055] (2)SnS 2 Preparation of / RGO gas sensor

[0056] Use a photoresist to bind a double-sided copper-clad LCP film on a silicon wafer with a thickness of 300 μm, remove the exposed copper layer on the surface of the LCP film by etching, and spin-coat a photoresist layer with a thickness of 5 μm on the surface. Sputtering 8nm Cr / 280nm Au layer, using lift-off technology to process interdigitated electrodes on the LCP substrate, the solid SnS prepared in the ...

Embodiment 2

[0059] 3D Flexible SnS 2 Preparation of / RGO gas sensor:

[0060] (1) 3D SnS 2 / Preparation of RGO

[0061] Under the condition of continuous stirring, add 0.60g of thioacetamide and 0.70g of tin chloride pentahydrate into 40mL of graphene oxide solution with a concentration of 0.2mg / mL. After heating for 10 h, the resulting product was centrifuged and washed with deionized water to obtain solid SnS 2 / RGO product.

[0062] (2)SnS 2 Preparation of / RGO gas sensor

[0063] Use a photoresist to bind a double-sided copper-clad LCP film on a silicon wafer with a thickness of 300 μm, remove the exposed copper layer on the surface of the LCP film by etching, and spin-coat a photoresist layer with a thickness of 5 μm on the surface. Sputtering 8nm Cr / 280nm Au layer, using lift-off technology to process interdigitated electrodes on the LCP substrate, the solid SnS prepared in the step S1 2 / RGO was re-dispersed in deionized water to prepare an aqueous dispersion with a concent...

Embodiment 3

[0065] 3D Flexible SnS 2 Preparation of / RGO gas sensor:

[0066] (1) 3D SnS 2 / Preparation of RGO

[0067] Under the condition of continuous stirring, add 0.90g of thioacetamide and 1.05g of tin chloride pentahydrate into 60mL of graphene oxide solution with a concentration of 0.2mg / mL. After heating for 12 h, the resulting product was centrifuged and washed with deionized water to obtain solid SnS 2 / RGO product.

[0068] (2)SnS 2 Preparation of / RGO gas sensor

[0069] Use a photoresist to bind a double-sided copper-clad LCP film on a silicon wafer with a thickness of 300 μm, remove the exposed copper layer on the surface of the LCP film by etching, and spin-coat a photoresist layer with a thickness of 5 μm on the surface. Sputtering 8nm Cr / 280nm Au layer, using lift-off technology to process interdigitated electrodes on the LCP substrate, the solid SnS prepared in the step S1 2 / RGO was re-dispersed in deionized water to prepare an aqueous dispersion with a concent...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of a 3D flexible tin disulfide / graphene (SnS2 / RGO) gas sensor for nitrogen dioxide detection. According to the invention, SnS2 is modified on the surface ofgraphene of a 3D structure, the SnS2 / RGO heterostructure is modified on the surface of a flexible LCP base material, and the flexible gas sensor capable of detecting nitrogen dioxide in a normal-temperature environment is prepared. The sensor prepared by the invention has excellent performances of high sensitivity, high selectivity and low detection limit, the sensitivity is 6.1 ppm<-1>, the detection limit is 8.7 ppb, and the sensor can be applied to the field of wearable equipment.

Description

technical field [0001] The invention belongs to the technical field of gas sensors, and relates to a 3D flexible tin disulfide / graphene (SnS 2 / RGO) gas sensor and its preparation method. Background technique [0002] With the rapid development of industry and agriculture, the emission of toxic and flammable gases, such as nitrogen oxides, sulfur oxides, and carbon oxides, seriously endangers environmental health. Among them, nitrogen dioxide (NO 2 ) can cause respiratory system and cardiovascular diseases, and can also cause acid rain and photochemical smog. It is considered to be a typical air pollutant. The international standard stipulates that NO 2 The annual safe concentration threshold is 53ppb. [0003] NO 2 It is also widely used in agriculture, medicine, military and mining fields. For example, the synthetic manufacture of explosives and fertilizers and as a biomarker for the diagnosis of lung diseases and gastrointestinal diseases, etc. Therefore, a NO with h...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N27/12G01N27/04
CPCG01N27/041G01N27/127
Inventor 吴进奚亚男胡淑锦
Owner HUIZHOU LEADAO ELECTRONICS MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com