An array substrate and its preparation method, a display panel, and a display device

Abstract

The application discloses an array substrate and its preparation method, a display panel, and a display device, which are used to detect the residual defects of via hole etching during the preparation process of the array substrate, so as to shorten the detection period of the defective etching residues and save costs . An array substrate provided in an embodiment of the present application, the array substrate includes: a base substrate, a conductive light-shielding layer on the base substrate, an insulating layer on the conductive light-shielding layer, and a conductive light-shielding layer on the A source-drain electrode layer on the insulating layer; the source-drain electrode layer is electrically connected to the conductive light-shielding layer through the first via hole penetrating through the insulating layer and the second via hole of the conductive light-shielding layer.

Description

Array substrate and preparation method thereof, display panel and display device technical field [0001] The application relates to the field of display technology, in particular to an array substrate and a preparation method thereof, a display panel, a display device. Background technique [0002] At present, organic light-emitting diodes (Organic Light-Emitting Diode, OLED) display panel technology are all There is contact hole etching, but in the prior art, the thickness of the gate and source and drain stages is getting thicker and thicker, and the thickness of the interlayer insulating layer is also Thicker and thicker, the difference between the uniformity of the film formation of the insulating layer and the uniformity of the dry etching is getting bigger and bigger, and the dry etching is bad. situation is increasing. Due to the increasing thickness of the interlayer insulating layer, the depth of the overlap hole can currently reach 1000 nm (nm) above, the i...

AI Technical Summary

Problems solved by technology

[0002] At present, there is contact hole etching in the organic light-emitting diode (Organic Light-Emitting Diode, OLED) display panel process. It is also getting thicker, the difference between the uniformity of the insulating layer and the uniformity of dry etching is getting bigger and bigger, and there are more and more bad dry etching.

Due to the increasing thickness of the interlayer insulating layer, the depth of the overlapping hole can reach more than 1000 nanometers (nm) at present, and the etching residue of the insulating layer is prone to appear. The subsequent leads cannot be overlapped through the overlapping hole, and the device cannot be lit. Dysplasia

Moreover, in the process of the prior art, the etching residue of the insulating layer in the lap hole cannot be detected during the product manufacturing process. Only after the detection stage of product preparation is completed, can the black spot defect be detected, and the product with black spot defect Can only be scrapped, wasting materials and costs

[0003] To sum up, the existing technology cannot detect the etching residue of the overlapping holes during the preparation process of display products, and the defective products can only be scrapped, wasting materials and costs

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