Substrate processing apparatus and method of manufacturing semiconductor device
A substrate processing device and gas processing technology, which is applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve problems such as damage and inability to obtain effects, and achieve adhesion suppression, productivity improvement, and excellent productivity Effect
Active Publication Date: 2020-03-06
KOKUSA ELECTRIC CO LTD
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Problems solved by technology
However, in this method, in order to prevent damage to the guide due to contact with the furnace mouth, it is necessary to provide a gap of a predetermined size, for example, about 4 mm, between the guide and the inner surface of the furnace mouth. get full effect
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[0026] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in the following drawings, the same or corresponding reference numerals are assigned to the same or corresponding components, and description thereof will be omitted.
[0027] In the first embodiment, the substrate processing apparatus is constituted as a vertical substrate processing apparatus (hereinafter referred to as a processing apparatus) 1 that performs a substrate processing process such as heat treatment as a manufacturing step in a manufacturing method of a semiconductor device (equipment). one of the processes.
[0028] Such as figure 1 As shown, the processing apparatus 1 has a cylindrical reaction tube 2 and a heater 3 as a heating device (heating mechanism) provided on the outer periphery of the reaction tube 2 . The reaction tube 2 is formed of, for example, quartz (SiO), silicon carbide (SiC), or the like. A temperature detector 4 is provi...
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The invention relates to a substrate processing apparatus and a method of manufacturing a semiconductor device. The substrate processing apparatus has a processing chamber and a plurality of nozzles,wherein the processing chamber is provided with: a cylindrical reaction tube of which one end is opened; a cylindrical manifold branch, which is connected to the open end of the reaction tube, whereina plurality of gas supply holes are formed in the side for guiding processing gas from the gas supply tube into the processing chamber; a lid, which can seal the opening, opposite to the end connected to the reaction tube, of the manifold branch in a openable / closable manner and is provided with a protective plate arranged on the inner surface of the lid in a manner of forming a first gap betweenthe protective plate and the lid and a guiding port which guides purging gas from the outer side of the lid into the first gap. The manifold branch is provided with a guiding plate, which is formed on the inner wall of the manifold branch in a manner of forming a second gap between the guiding plate and the manifold branch, so that the purging gas, flowing to the manifold branch in the first gap,can be deviated into the second gap by means of the inner wall of the manifold branch.
Description
technical field [0001] The present invention relates to a substrate processing apparatus for processing a substrate such as forming a thin film, and a method of manufacturing a semiconductor device using the substrate processing apparatus. Background technique [0002] As a substrate processing apparatus that performs substrate processing in a manufacturing process of a semiconductor device, there is a vertical substrate processing apparatus. In the vertical substrate processing apparatus, a plurality of substrates are stacked and held in multiple layers, and loaded into a processing chamber to process the plurality of substrates in batches. [0003] In recent years, the need for a high-temperature process using a difficult-to-decompose raw material gas has increased. When a high-temperature process is performed, the furnace mouth portion at the lower part of the processing chamber also becomes high temperature, which may exceed the heat-resistant temperature of sealing mem...
Claims
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Login to View More IPC IPC(8): C23C16/44H01L21/67
CPCC23C16/4408H01L21/67011H01L21/67109H01L21/67017H01L21/67098H01L21/67126H01L21/67248H01L21/02337H01L21/67236
Inventor 冈嶋优作西堂周平吉田秀成佐佐木隆史
Owner KOKUSA ELECTRIC CO LTD