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Polishing slurry composition

A composition, slurry technology, used in polishing compositions containing abrasives, other chemical processes, electrical components, etc.

Active Publication Date: 2020-03-24
K C TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no polishing slurry composition for CMP process that can be used to manufacture substrates of semiconductor elements including inorganic oxide films such as ITO, and this needs to be studied in reality

Method used

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  • Polishing slurry composition
  • Polishing slurry composition
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to Embodiment 15

[0067] According to Table 1, the average particle size of primary particles is 4% by weight of colloidal ceria (HC-60, Solvay company) of 60nm (BET measurement), picolinic acid (Picolinic acid) as dispersant, polyethyleneimine (PEI, Polyethyleneimine) was used as a stabilizer, and oxalic acid (Oxalic acid) was mixed with ultrapure water as a polishing selectivity regulator, and a polishing slurry composition was prepared based on Table 1.

Embodiment 16 and Embodiment 17

[0069] In said embodiment 1, the colloidal ceria particle (HC-90, Solvay company) that the average particle size of polishing particle uses primary particle is 90nm (BET measurement), except that, other conditions are identical, prepare according to table 1 Polishing slurry composition.

[0070] 【Table 1】

[0071]

[0072] (1) Evaluation of dispersion stability

[0073] In order to evaluate the dispersion stability of the slurry composition of the example, the particle size was measured on the 0th day and the first day respectively, and the stability over time was measured.

[0074] 【Table 2】

[0075]

[0076] Referring to Table 2, Examples 1 to 5 and Examples 9 to 17 show good dispersion stability even if oxalic acid, which acts as an ITO etchant, is added. And have low dispersion stability.

[0077] (2) Evaluation of polishing characteristics

[0078] Using the polishing slurry composition of the example, the substrate containing the ITO film and the SiN film was ...

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Abstract

The present invention relates to a polishing slurry composition comprising: polishing particles; a dispersant; a stabilizer; and a polishing selectivity regulator, wherein the dispersant includes an aromatic organic acid containing one or more carboxyl groups (-COOH).

Description

technical field [0001] The present invention relates to a polishing slurry composition for improving polishing rate and dispersion stability. Background technique [0002] A chemical mechanical polishing (CMP) process is a process in which a slurry including polishing particles is placed on a substrate and implemented using a polishing pad installed in a polishing device. At this time, the polishing particles are subjected to the pressure of the polishing device to mechanically grind the surface, and the chemical components contained in the slurry composition cause a chemical reaction on the surface of the substrate, thereby chemically removing the surface portion of the substrate. Typically, a variety of slurry compositions can be selected depending on the type and nature of the object to be removed. [0003] In the manufacturing process of semiconductor components, chemical mechanical polishing technology is a necessary process for the planarization of interlayer insulati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09K3/14
CPCC09G1/02C09K3/1472C09K3/1409C09K3/1436C09K3/1454H01L21/30625
Inventor 权璋国李性表张玹准
Owner K C TECH
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