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Resist composition and patterning process

A composition and resist technology, applied in the direction of organic chemistry, photoengraving process of pattern surface, instruments, etc.

Pending Publication Date: 2020-03-24
SHIN ETSU CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Phenomenon where the hole pattern is not opened at a probability of one in a few million due to the change in the number of photons

Method used

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  • Resist composition and patterning process
  • Resist composition and patterning process
  • Resist composition and patterning process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to 23 and comparative example 1 to 4

[0204] (1) Preparation of resist composition

[0205] A resist composition was prepared by dissolving the components in a solvent according to the formulations shown in Tables 1 and 2, and filtering through a filter having a pore size of 0.2 μm. The solvent contained 100 ppm of surfactant PF636 (Omnova Solutions Inc.). The components in Tables 1 and 2 were identified as follows.

[0206] Organic solvents:

[0207] PGMEA (Propylene Glycol Monomethyl Ether Acetate)

[0208] GBL (γ-butyrolactone)

[0209] CyH(cyclohexanone)

[0210] PGME (Propylene Glycol Monomethyl Ether)

[0211] DAA (Diacetone Alcohol)

[0212] Comparative acid generator: C-PAG 1 to C-PAG 3 of the following structural formula

[0213]

[0214] Quenchers 1 to 3 of the formula

[0215]

[0216] (2) EUV photolithography test

[0217] Each of the resist compositions in Tables 1 and 2 was spin-coated on a 20-nm coating with a silicon-containing spin-on hard mask SHB-A940 (Shin-Etsu Chemical Co., Ltd....

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Abstract

The invention relates to a resist composition and a patterning process. A resist composition comprising a base polymer and an acid generator containing a sulfonium salt having an iodized benzene ringoffers a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

Description

[0001] Cross References to Related Applications [0002] This nonprovisional application claims priority under 35 U.S.C. Section 119(a) of Patent Application No. 2018-173519 filed in Japan on September 18, 2018, the entire contents of which are incorporated by reference This article. technical field [0003] The present invention relates to a resist composition and a pattern forming method. Background technique [0004] In order to meet the requirements of higher integration and operation speed of LSI, efforts to reduce the pattern scale are proceeding rapidly. In particular, the expansion of the logic memory market in response to the widespread use of smartphones is driving the development of miniaturization technology. As an advanced miniaturization technique, the fabrication of microelectronic devices at the 10 nm node by double patterning by ArF immersion lithography has been implemented on a large scale. The next generation of 7nm node devices manufactured by double...

Claims

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Application Information

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IPC IPC(8): G03F7/004G03F7/039G03F7/038G03F7/20
CPCG03F7/004G03F7/0382G03F7/0392G03F7/70025G03F7/0045G03F7/0046G03F7/0397G03F7/039C08F8/34G03F7/2012G03F7/2053G03F7/2004G03F7/2059C07C381/12
Inventor 畠山润大桥正树藤原敬之
Owner SHIN ETSU CHEM IND CO LTD
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