Method of performing program operation and related memory device

A storage device and storage unit technology, applied in static memory, read-only memory, digital storage information, etc., can solve problems such as programming interference, programming interference, and channel potential reduction of selected storage cells

Active Publication Date: 2020-03-31
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Applicants noted that during the precharge phase, residual electrons may be trapped in the storage regions of dummy cells of unselected strings, resulting in the selected storage of selected strings adjacent to the unselected strings. program disturb
For example, during the boost / program phase, residual electrons trapped in unselected strings may lower the channel potential corresponding to selected memory cells of the selected string, causing program disturb

Method used

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  • Method of performing program operation and related memory device
  • Method of performing program operation and related memory device
  • Method of performing program operation and related memory device

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Embodiment Construction

[0016] figure 1 Residual electrons remaining in the channels of unselected strings 12 adjacent to the selected string 10 are shown. The memory array may include selected strings 10 and unselected strings 12 . The memory array may be a three-dimensional NAND flash memory array including a plurality of bit lines, a plurality of word lines, and a plurality of strings, where each string extends vertically and includes a plurality of memory cells formed in a plurality of horizontal layers.

[0017] Strings 10 and 12 are structurally identical; for example, each of strings 10 and 12 may include a top select cell, a plurality of top dummy cells, a plurality of top storage cells, a plurality of middle dummy cells, a plurality of bottom storage cells , a plurality of bottom dummy cells, and a bottom selection cell, wherein the cells included in the string are connected in series. The plurality of top dummy cells includes i cells, the plurality of top memory cells includes j cells, th...

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PUM

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Abstract

A method of performing a program operation on a three-dimensional (3D) NAND memory device is disclosed. The method enables removal of residual electrons trapped in a storage region of an intermediatedummy memory cell of an unselected string of the 3D NAND memory device during a pre-charge phase, thereby reducing programming disturbances to a selected string adjacent to the unselected string.

Description

technical field [0001] The present invention relates to a method of performing a programming operation, and more particularly, to a method of performing a programming operation on a three-dimensional (3D) NAND memory device. Background technique [0002] Semiconductor memory is widely used in a variety of electronic devices such as cellular phones, digital cameras, personal digital assistants, medical electronics, mobile computing devices, and non-mobile computing devices. Non-volatile memory allows information to be stored and retained. Examples of nonvolatile memory include flash memory (for example, NAND type and NOR type flash memory) and electrically erasable programmable read only memory (Electrically Erasable Programmable Read Only Memory, EEPROM). [0003] Memory cells in some NAND architectures have a charge storage region that holds charge in order to program the memory cell. One example of a charge storage region is a floating gate. When programming an EEPROM o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/12G11C16/08G11C16/24
CPCG11C16/10G11C16/12G11C16/08G11C16/24G11C16/3427G11C16/0483G11C11/5628G11C16/30G11C16/32G11C16/3418G11C16/28
Inventor 贾信磊李姗李楷威贾建权靳磊游开开崔莹宋雅丽候伟王治煜刘红涛
Owner YANGTZE MEMORY TECH CO LTD
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