Mid-infrared vertical cavity laser

A vertical cavity, laser technology, applied in lasers, semiconductor lasers, laser parts and other directions, can solve the problems of poor thermal resistance, short gain length, etc.

Active Publication Date: 2020-04-03
THORLABS INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This problem is even worse in VCLs compared to edge emitting lasers, because VCLs have a short gain length and their thermal resistance is generally worse than edge emitters
Therefore, in VCLs using type I quantum wells, RTCW operation has not been achieved beyond 3.0um

Method used

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  • Mid-infrared vertical cavity laser
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Examples

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Embodiment Construction

[0021] The description of illustrative embodiments in accordance with the principles of the invention is intended to be read in conjunction with the accompanying drawings, which should be considered a part of this entire specification. In describing the embodiments of the invention disclosed therein, any references to directions or orientations are for convenience of description only and are not intended to limit the scope of the invention in any way. Relative terms such as "lower", "higher", "horizontal", "vertical", "upper", "lower", "upward", "downward", "top" and "bottom" and their derivatives (e.g., "horizontally," "downwardly," "upwardly," etc.) direction. These relative terms are for descriptive convenience only and do not require that the device be constructed or operated in a particular orientation unless so expressly indicated. Terms such as "attached," "attached," "connected," "coupled," "interconnected," and similar terms refer to a relationship in which structur...

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Abstract

Disclosed is an optically pumped vertical cavity laser structure operating in the mid-infrared region, which has demonstrated room-temperature continuous wave operation. This structure uses a periodicgain active region with type I quantum wells comprised of InGaAsSb, and barrier / cladding regions which provide strong hole confinement and substantial pump absorption. A preferred embodiment includesat least one wafer bonded GaAs-based mirror. Several preferred embodiments also include means for wavelength tuning of mid-IR VCLs as disclosed, including a MEMS-tuning element. This document also includes systems for optical spectroscopy using the VCL as disclosed, including systems for detection concentrations of industrial and environmentally important gases.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Provisional Patent Application No. 62 / 533,501 filed July 17, 2017. The contents of US Provisional Patent Application 62 / 533,501 are hereby incorporated by reference. [0003] Statement Regarding Federally Sponsored Research or Development [0004] This invention was made with Government support under Contract No. DE-AR0000538 awarded by DOE, Office of ARPA-E. The government has certain rights in this invention. technical field [0005] The present invention relates generally to mid-infrared semiconductor lasers, and more particularly to tunable mid-infrared semiconductor lasers and vertical cavity lasers. Background technique [0006] The realization of room temperature continuous wave (RTCW) vertical cavity lasers (VCLs) operating at wavelengths beyond approximately 3.0 micrometers (um) presents serious challenges. As of June 2017, electrically pumped VCLs (eVCLs) using ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/34H01S5/183
CPCH01S5/18358H01S5/18366H01S5/18377H01S5/1838H01S5/18383H01S5/34306H01S5/041G01J2003/423G01J3/42H01S5/3403H01S5/18361H01S5/3218H01S5/34366
Inventor V·贾亚拉曼K·拉斯科拉S·西格尔F·汤纳A·科伯
Owner THORLABS INC
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