Semiconductor power device

Abstract

The invention belongs to the technical field of semiconductor power devices, and particularly discloses a semiconductor power device. The semiconductor power device comprises: a semiconductor substrate; first gate trenches and second gate trenches which are located in the semiconductor substrate and are adjacent to each other; body regions positioned between the first gate trenches and the secondgate trenches; source regions located in the body regions; gate dielectric layers and control gates which are respectively positioned in the first gate trenches and the second gate trenches; source electrode contact holes located above the body regions and extending to the positions above the first gate trenches, wherein control gates in the body regions, the source regions and the first gate trenches are externally connected with a source electrode voltage through source electrode metal layers in the source electrode contact holes. According to the invention, the distance between adjacent gate trenches in the semiconductor power device can be reduced, so that the doping concentration of the semiconductor substrate can be improved, and the on-resistance is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, in particular to a semiconductor power device capable of reducing the distance between adjacent gate trenches. Background technique [0002] figure 1 It is a schematic cross-sectional structure diagram of a semiconductor power device in the prior art, such as figure 1 As shown, a semiconductor power device in the prior art includes: an n-type semiconductor substrate 100, an n-type drain region 10 located at the bottom of the n-type semiconductor substrate 100, located in the n-type semiconductor substrate 100 and located in the n-type drain region The n-type drift region 11 above 10 is located in a plurality of gate trenches in the n-type semiconductor substrate 100, and the p-type body region 16 between adjacent gate trenches is located in the p-type body region 16 The n-type source region 17 is located in the gate dielectric layer 12, the control gate 13, the isolation die...

AI Technical Summary

Problems solved by technology

[0004] In view of this, the object of the present invention is to provide a semiconductor power device to solve the problem that the distance between adjacent gate trenches in the prior art semiconductor power device is difficult to reduce

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