Pulse power supply control circuit and semiconductor processing equipment

Abstract

The invention provides a pulse power supply control circuit and semiconductor processing equipment. The pulse power supply control circuit comprises a pulse power supply module, an energy storage module and a switch module, wherein the switch module is used for switching on a circuit between the pulse power supply module and the transformer and switching off a circuit between the energy storage module and the transformer when pulse starting signals are input into the first control end and the second control end so as to form a high-voltage power supply signal and load the high-voltage power supply signal to a load; when the first control end and the second control end input pulse closing signals, a circuit between the energy storage module and the transformer is connected, and a circuit between the pulse power supply module and the transformer is disconnected. The energy storage module is used for storing residual electric energy from the transformer. According to the pulse power supply control circuit provided by the invention, the oscillation of the voltage at the end of each pulse can be reduced, so that the control accuracy of low-energy ion implantation under a high dose is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a pulse power supply control circuit and semiconductor processing equipment. Background technique [0002] With the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires enterprises that produce integrated circuits to continuously improve the processing capacity of semiconductor wafers. Plasma devices are widely used in fabrication processes for manufacturing integrated circuits (ICs) or MEMS devices. Therefore, the development of plasma generation equipment suitable for other processes such as etching, deposition or ion implantation is crucial for the development of semiconductor manufacturing processes and facilities. [0003] At present, plasma immersion ion implantation (Plasma Immersion Ion Implantation, hereinafter referred to as PIII) technology has been widely used in surfa...

AI Technical Summary

Problems solved by technology

However, due to the existence of elements such as primary and secondary inductances contained in the transformer, at the end of each pulse, the residual electric energy in these elements will continue to circulate in the loop containing the load, resulting in a voltage generated at the end of each pulse Oscillation, which makes it difficult to ensure precise control of low-energy ion implantation at high doses

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