Preparation method of three-dimensional integrated circuit structure of high-density phase change memory

Abstract

The invention discloses a preparation method of a three-dimensional integrated circuit structure of a high-density phase change memory, which is characterized by comprising the following steps of: S1,preparing a gating tube unit, S2, preparing an intermediate electrode above the top electrode of the gating tube unit, the directions of the electrodes being intersected, and S3, preparing n phase change memory units above the intermediate electrode, n being an integer greater than or equal to 2, the n phase change memory units being arranged in parallel, respective bottom electrodes being formedabove the intermediate electrode and intersected with the electrode direction of the intermediate electrode, and connecting the gating tube unit and the n phase change memory units in series. According to the method, the memory cells can be vertically stacked in multiple layers in the array integration process, extra area does not need to be occupied, and the space utilization area is greatly increased, so that the storage density can be greatly increased; meanwhile, the integrated structure of the memories at the two ends and the gating tube has stacking capacity in the three-dimensional direction, and the storage density can be further improved.

Description

technical field [0001] The invention belongs to the technical field of micro-nano electronics, and relates to a preparation method of an information memory, in particular to a preparation method of a gate tube of a chalcogenide material used in a three-dimensional integrated circuit structure of a high-density phase-change memory. Background technique [0002] The phase-change memory unit is based on the idea that the phase-change film can be applied to the phase-change storage medium proposed in the late 1960s and early 1970s. It is a low-cost, stable performance storage device. Phase-change memory cells can be built on silicon wafers or SOI substrates. The key materials are recordable phase-change films, heating materials, and heat-insulating materials. The research hotspots are centered around device technology. The basic principle of the phase-change memory unit is to use an electric pulse signal to act on the device unit, so that the phase-change material undergoes a re...

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Problems solved by technology

However, the existing 1S1R structure has the following defects: due to the huge number of memory arrays, multi-layer stacking is required, and its preparation process is relatively difficult. When it is necessary to perform block operations on phase-change memory cells, large power consumption will be generated.

However, the existing 1TnR structure has the following defects: First, the manufacturing process of the transistor is more complicated than that of the gate tube, which greatly increases the manufacturing cost of the storage device; secondly, as the size of the transistor decreases, its leakage current will decrease. increase, causing the transistor to not be completely turned off, which affects the performance of the memory

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