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A kind of MOS tube automatic power aging test system and test method

A technology of aging test and automatic power, which is applied in the direction of single semiconductor device testing, measuring electricity, measuring devices, etc. It can solve the problems that the finished device cannot be measured, and the direct measurement cannot be realized, so as to achieve the effect of effective elimination and sufficient aging

Active Publication Date: 2021-10-15
中国测试技术研究院流量研究所
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are almost no finished devices with preset temperature sensors, and direct measurement cannot be realized; for infrared thermography, due to the certain thermal resistance of device packaging materials, infrared thermography can only measure unpackaged devices, not finished devices.

Method used

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  • A kind of MOS tube automatic power aging test system and test method
  • A kind of MOS tube automatic power aging test system and test method
  • A kind of MOS tube automatic power aging test system and test method

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Embodiment Construction

[0042] The present invention will be described in further detail below with reference to the drawings and specific embodiments.

[0043] The existing aging method fails to reach the maximum allowable junction temperature during the test, and the aging is not sufficient; while the direct measurement of the junction temperature T j method cannot be realized. In order to be able to accurately measure the junction temperature T j , requires a new measurement T j Methods. like figure 1 As shown, the present invention has been tested to show that the on-resistance R of the MOS tube is in the conduction state. DS(ON) with T j There is a certain relationship, T j The higher the R DS(ON) bigger. exist figure 1 The normalized R of the MOS tube IRFB4019 DS(ON) with T j From the relationship curve, it can be seen that in the range of 25°C to 175°C, the relationship between the two is close to linear. Normalized R DS(ON) with T j The relationship is linearized by measuring R ...

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Abstract

The invention discloses a MOS tube automatic power aging test system and a test method. The test system is composed of three parts: a human-computer interaction interface unit, a power supply unit and an aging board; the human-computer interaction interface unit communicates with the aging board through the RS485 bus , to realize the download of aging data and real-time display of aging status; the power supply unit uses an adjustable power supply to provide working power for the aging board, and determines the power parameters according to the device under test; the aging board is responsible for the aging work of the device under test, and transmits the aging status in real time To the human-computer interaction interface unit; the aging board includes two working modes of constant power aging and cycle heating aging. The aging testing system and testing method of the present invention can control the junction temperature of the tested device in the vicinity of the highest allowable junction temperature as much as possible during the aging process, realize the comprehensive aging of the tested MOS tube, and make the MOS tube test more reliable.

Description

technical field [0001] The invention relates to the field of MOS tube testing, in particular to a MOS tube automatic power aging testing system and testing method. Background technique [0002] With the continuous advancement of science and technology, the application of electronic technology has made intelligence and automation a part of our people's daily life. Due to its wide range of applications, if a large area of ​​failure occurs during use, it will cause inestimable losses, and its reliability requirements continue to increase. Semiconductor devices are the core of electronic equipment, and their reliability is particularly important. However, due to the complexity of the semiconductor device manufacturing process and its life characteristics (bathtub failure probability), it is difficult to detect its quality from the appearance. Especially for electronic products with high power output, while the power device transmits power, the device itself also consumes a par...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2621G01R31/2628
Inventor 杨修杰甘蓉陈艳李蓉刘浩峰
Owner 中国测试技术研究院流量研究所
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