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A rotatable Faraday cleaning device and plasma processing system

A processing system and plasma technology, applied in the field of ICP chamber cleaning, can solve the problems of inability to clean the coupling window, inconvenient cleaning of the ICP reaction chamber, inconvenient internal cleaning, etc., to improve the convenience of cleaning, easy cleaning, and reasonable structure Effect

Active Publication Date: 2022-02-22
JIANGSU LEUVEN INSTR CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the past, ICP reaction chambers were often used in the etching of semiconductor integrated circuits, but in production, it often occurred that the inside of the coupling window could not be cleaned, because there were a large number of dead angles, and the traditional reaction chamber was fixed installation, which was inconvenient to clean. The interior is fully cleaned, and the existing ICP reaction chamber is not convenient for cleaning. Now there is an urgent need for a rotatable Faraday cleaning device and plasma processing system to solve the above problems

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  • A rotatable Faraday cleaning device and plasma processing system
  • A rotatable Faraday cleaning device and plasma processing system
  • A rotatable Faraday cleaning device and plasma processing system

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Embodiment Construction

[0018] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific embodiments.

[0019] see Figure 1-Figure 3 The present invention provides a technical solution: a rotatable Faraday cleaning device and a plasma processing system, including a reaction chamber main body 1, a bias electrode 2 and a rotatable cleaning mechanism 3, and a bias electrode is installed on the lower side of the reaction chamber main body 1. The electrode 2 is placed, and a rotatable cleaning mechanism 3 is provided on the upper side of the reaction chamber main body 1 .

[0020] The rotatable cleaning mechanism 3 includes a cavity cover 31, a motor 32, an eccentric wheel 33, a long petal assembly 34, a coupling window 35, an air inlet nozzle 36, a connecting rod 331, a short petal assembly 341, a fan-shaped conductive member 1 361 and a fan-shaped con...

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Abstract

The invention provides a rotatable Faraday cleaning device and a plasma processing system, including a cavity cover, a motor, an eccentric wheel, a long petal assembly, a coupling window, an air inlet nozzle, a connecting rod, a short petal assembly, a fan-shaped conductive part 1 and a fan-shaped Conductor 2, the upper side of the main body of the reaction chamber is equipped with a chamber cover, the inner side of the chamber cover is equipped with a coupling window, the middle of the coupling window is provided with an air inlet nozzle, the outer side of the air inlet nozzle is equipped with a fan-shaped conductive member 1, and the outer side of the air inlet nozzle is equipped with a fan-shaped conductive Part 2, the outer side of the intake nozzle is equipped with a long petal assembly, the outer side of the air intake nozzle is equipped with a short petal assembly, the left side of the long petal assembly is equipped with a connecting rod, the front side of the connecting rod is equipped with an eccentric wheel, and the upper side of the eccentric wheel is equipped with a motor. This design solves the problem that the original ICP reaction chamber is inconvenient to clean, and the invention has a reasonable structure, is convenient for effective and comprehensive cleaning of the ICP reaction chamber.

Description

technical field [0001] The invention relates to a rotatable Faraday cleaning device and a plasma processing system, belonging to the technical field of ICP chamber cleaning. Background technique [0002] In the semiconductor integrated circuit manufacturing process, etching is the most important process, among which plasma etching is one of the commonly used etching methods, usually etching occurs in the vacuum reaction chamber, usually the vacuum reaction chamber includes electrostatic adsorption The chuck is used to carry the functions of absorbing wafers, RF loads and cooling wafers. [0003] In the past, ICP reaction chambers were often used in the etching of semiconductor integrated circuits, but in production, it often occurred that the inside of the coupling window could not be cleaned, because there were a large number of dead angles, and the traditional reaction chamber was fixed installation, which was inconvenient to clean. The interior is fully cleaned, and the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32B08B5/02B08B13/00
CPCH01J37/32853H01J37/32862H01J37/3288B08B5/02B08B13/00B08B1/04B08B1/005B08B9/00H01J2237/334
Inventor 刘海洋胡冬冬刘小波李娜程实然郭颂吴志浩许开东
Owner JIANGSU LEUVEN INSTR CO LTD
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