Lighting communication device based on multiple electrodes and preparation method of device
A lighting communication, multi-electrode technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of low modulation rate and unresponsive high-speed signals, and achieve the effect of reducing junction capacitance, improving visible light communication capacity, and improving response rate.
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[0029] The present invention will be described in further detail below.
[0030] The structure of the lighting communication device based on multi-electrodes of the present invention is as follows Figures 1 to 2 As shown, the lighting communication device includes an N-type semiconductor layer, a multi-quantum well layer, an N-electrode, a P-type semiconductor layer, and a P-electrode from bottom to top. The N-electrode is located on the surface of the N-type semiconductor layer, and the P-electrode is located on the surface of the P-type semiconductor layer. .
[0031] Also included in the lighting communication device are four SiO 2 Insulation pads 2-1 to 2-4, SiO 2 The insulating pad is arranged along the outer wall of the multi-quantum well layer and the P-type semiconductor layer to the surface of the N-type semiconductor layer, and two adjacent SiO 2 The angle between the insulating pads is 90°.
[0032] The P electrode includes a P electrode inner ring 4, a P elect...
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