Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and forming method thereof

A technology for semiconductors and devices, applied in the field of semiconductor devices and their formation, can solve problems such as obstacles to improving the function of semiconductor devices, and achieve the effects of increasing strength and increasing the field strength of the drain region.

Pending Publication Date: 2020-05-01
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the continuous reduction of the structure size of semiconductor devices, the short channel effect has become an obstacle restricting the improvement of the functions of semiconductor devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof
  • Semiconductor device and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] As mentioned above, when the existing semiconductor devices are working, the channel current cannot reach the expected value at a lower voltage, and leakage is prone to occur at a higher voltage.

[0040] After research, it is found that the reasons for the above problems are: the reduction of the size of semiconductor devices, the channel becomes narrower, and after a large voltage is applied, it is easy to leak, and the channel current cannot reach the expected value.

[0041] In order to solve this problem, the present invention provides a semiconductor device in which a tunneling layer is formed between a drain region and a channel. When the tunneling layer composed of specific ions receives a small voltage, the electric field intensity of the drain region changes, which can generate tunneling current and increase the intensity of channel current.

[0042] Various exemplary embodiments of the present invention will now be described in detail with reference to the ac...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thickness dimensionaaaaaaaaaa
Login to View More

Abstract

The invention discloses a forming method of a semiconductor device. The method comprises steps of providing a fin part, a channel layer and a gate structure, forming the channel layer at the top of the fin part, and forming the gate structure at the top of the channel layer; etching a part of the channel layer at two sides of the gate structure to form a drain region groove at one side of the remaining channel layer; forming a tunneling layer inside or on a side wall of one side, close to the drain region groove, of the remaining channel layer, and forming a drain region in the drain region groove. The method is advantaged in that after the tunneling layer is formed, the channel current with the target intensity can be generated by applying a small voltage, and performance of the semiconductor device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] With the continuous reduction of the structure size of semiconductor devices, the short channel effect has become an obstacle restricting the improvement of the functions of semiconductor devices. People are constantly improving the distribution of structures, as well as the selection of special materials. For example, silicon-on-insulator (SOI) is currently used to form channels, which reduces the leakage of semiconductor devices. Or select a special channel material to improve the channel electron mobility. [0003] With the further reduction of the size of semiconductor devices, it is necessary to increase the voltage to achieve the desired channel current, but increasing the voltage will bring other problems. [0004] Therefore, there is an urgent need in the prior art for a semico...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/785H01L29/0607H01L29/0657H01L29/66068H01L29/66795
Inventor 赵猛
Owner SEMICON MFG INT (SHANGHAI) CORP