Semiconductor device, manufacturing method thereof, and electronic equipment including the semiconductor device
A semiconductor and device technology, applied in the field of electronic equipment, which can solve problems such as fin collapse, gap filling, and enhancement of device performance
Active Publication Date: 2021-09-14
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
However, if the fin height is too large, it will bring many problems, such as fin collapse, gap filling, etch topography control, etc.
For MBCFETs, the spacing between nanosheets included therein cannot be further reduced for the purpose of gate metal filling, and the self-heating problem becomes severe
Also, unlike FinFETs, the height of MBCFETs cannot be used to enhance device performance
Method used
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[0011] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.
[0012] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...
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Abstract
Disclosed are a semiconductor device, a method of manufacturing the same, and electronic equipment including the semiconductor device. According to an embodiment, a semiconductor device includes a channel portion, a source / drain portion contacting the channel portion at opposite sides of the channel portion, and a gate stack intersecting the channel portion. The channel portion includes a first portion extending in a vertical direction relative to the substrate and a second portion extending from the first portion to opposite sides respectively in a lateral direction relative to the substrate.
Description
technical field [0001] The present disclosure relates to the field of semiconductors, and more particularly, to a semiconductor device having a tree-like channel structure, a manufacturing method thereof, and an electronic device including such a semiconductor device. Background technique [0002] Various structures have been proposed to meet the challenge of further miniaturization of semiconductor devices, such as Fin Field Effect Transistor (FinFET) and Multi-Bridge Channel Field Effect Transistor (MBCFET). For FinFET, as it shrinks further, the height of the fin can be higher and higher in order to obtain sufficient drive current while saving area. However, if the fin height is too large, it will bring many problems, such as fin collapse, gap filling, etch topography control, etc. For MBCFETs, the spacing between nanosheets included therein cannot be further reduced for the purpose of gate metal filling, and the self-heating problem becomes severe. Also, unlike FinFETs...
Claims
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IPC IPC(8): H01L29/78H01L29/10H01L29/06H01L21/336
CPCH01L29/78H01L29/1025H01L29/0603H01L29/0684H01L29/66795H01L29/775H01L29/66545H01L29/7848H01L29/165B82Y10/00H01L29/0673H01L29/66439H01L29/0847H01L29/78696H01L29/42392H01L21/823412H01L21/823418H01L21/823468H01L21/823481H01L29/6656H01L29/78618
Inventor 朱慧珑
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI