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Low-noise amplifier radiofrequency front-end circuit suitable for Beidou second-generation frequency band

A front-end circuit and frequency band technology, applied in the field of low-noise amplifier radio frequency front-end circuit, can solve problems such as not being well applicable, and achieve the effect of low standing wave ratio

Active Publication Date: 2020-05-08
CHINA SOUTH IND GRP SHANGHAI ELECTRIC CONTROL RES INST
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Problems solved by technology

This patent is not well applicable to the application of the low-noise radio frequency front-end circuit in the Beidou second-generation frequency band

Method used

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  • Low-noise amplifier radiofrequency front-end circuit suitable for Beidou second-generation frequency band
  • Low-noise amplifier radiofrequency front-end circuit suitable for Beidou second-generation frequency band
  • Low-noise amplifier radiofrequency front-end circuit suitable for Beidou second-generation frequency band

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Embodiment Construction

[0022] The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that those skilled in the art can make several changes and improvements without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0023] Such as Figure 1-Figure 5 As shown, a low-noise RF front-end circuit suitable for Beidou second-generation frequency band provided according to the present invention includes: a first-stage amplifier unit, a first filter unit, an inter-stage matching unit, and a second-stage amplifier unit; The first-stage amplifier unit includes: a first-stage amplifier chip, a capacitor C1, a capacitor C2, a capacitor C3, a resistor R1, a resistor R2, a resistor R3, an inductor L1, and an inductor L3; the firs...

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Abstract

The invention provides a low-noise amplifier radiofrequency front-end circuit suitable for a Beidou second-generation frequency band. The low-noise amplifier radiofrequency front-end circuit comprisesa first-stage amplifier unit, a first filtering unit, an inter-stage matching unit and a second-stage amplifier unit; the first-stage amplifier unit comprises a first-stage amplifier chip, a capacitor C1, a capacitor C2, a capacitor C3, a resistor R1, a resistor R2, a resistor R3, an inductor L1 and an inductor L3; the first-stage amplifier chip adopts a chip of which the model is ATF54143; the output end of the first-stage amplifier unit is connected with the input end of the first filtering unit; the output end of the first filtering unit is connected with the input end of the inter-stage matching unit; the output end of the inter-stage matching unit is connected with the input end of the second-stage amplifier unit; the second-stage amplifier unit comprises a second-stage amplifier chip, a capacitor C6, a capacitor C11 and an inductor L5; and the secondary amplifier chip adopts a chip of which the model is ASL226.

Description

technical field [0001] The present invention relates to a front-end circuit, in particular to a low-noise radio-frequency front-end circuit suitable for the second-generation Beidou frequency band. Background technique [0002] The low-noise amplifier (LNA for short) is the main part of the Beidou 2nd generation RF front-end. It is located at the front end of the receiver. It amplifies and filters the wireless signal that needs to be processed into a signal that the RF chip can process. Because the wireless signal is very weak and accompanied by a lot of interference. Therefore, the system has high requirements on the noise, gain and linearity of the low-noise amplifier, and requires good matching of input and output impedances and effective power transmission. Many design schemes use two-stage ATF54143 cascading method to achieve a certain gain through software simulation, and lack of actual test results. Compared with the simulation results, the actual gain usually drops ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/26
CPCH03F1/26Y02D30/70
Inventor 薛雯周和平卢飞平冯益
Owner CHINA SOUTH IND GRP SHANGHAI ELECTRIC CONTROL RES INST
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