Junction termination extension terminal structure with intermediate layer coverage regulation and control and preparation method thereof
A junction terminal extension and termination structure technology is applied in the field of junction termination extension termination structure and its preparation, and can solve the problems of changing the effective doping charge amount in the termination region, unstable transmutation of device breakdown voltage, and early breakdown of surface leakage. , to achieve the effect of optimizing the macroscopic electric field distribution, reducing the peak electric field, and suppressing the transmutation of the breakdown voltage
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Embodiment 1
[0040] See figure 1 with figure 2 , figure 1 It is a schematic structural diagram of a node-terminal extended terminal structure with a control intermediate layer coverage provided by an embodiment of the present invention, figure 2 A structural schematic diagram of another node-terminal extension terminal structure provided for the present invention to regulate the coverage of the intermediate layer, wherein, figure 1The junction terminal extension terminal structure in is a body type multi-floating zone junction termination extension terminal structure (Body MFZ-JTE, B-MFZ-JTE), figure 2 The junction-terminated extended termination structure in the paper is a single-region surface-type MFZ-JTE, both of which are suitable for high-voltage SiC power devices. figure 1 with figure 2 The terminal structure in each includes: a silicon carbide substrate layer 101 , a semiconductor layer 102 , a junction terminal extension region 103 , an active region 104 , a regulating int...
Embodiment 2
[0052] See image 3 with Figure 4a-Figure 4f , image 3 A schematic flow chart of a preparation method of a junction terminal extended terminal structure with a controllable intermediate layer coverage provided by an embodiment of the present invention, Figure 4a-Figure 4f A process schematic diagram of a method for preparing a junction terminal extended terminal structure with regulated intermediate layer coverage provided by an embodiment of the present invention. The preparation method comprises steps:
[0053] S1, growing and forming a semiconductor layer 102 on the surface of the silicon carbide substrate layer 101 . See Figure 4a .
[0054] Specifically, the silicon carbide substrate layer 101 is selected, and the silicon carbide substrate layer 101 is an N-type silicon carbide material; the semiconductor layer 102 having the first conductivity type is formed on the silicon carbide substrate layer 101 through the first homoepitaxial growth, and the The semicondu...
Embodiment 3
[0067] see again figure 1 , this embodiment provides this terminal structure on the basis of Embodiment 1 and Embodiment 2. The structural parameters of the terminal structure are specifically: the silicon carbide substrate layer 101 is made of N-type silicon carbide material, and the doping concentration is 5 ×10 18 cm -3 , thickness 350 μm. The semiconductor layer 102 is made of lightly doped N-type silicon carbide material, has the first conductivity type, and has a doping concentration of 3×10 15 cm -3 , thickness 30 μm. The junction terminal extension region 103 is made of P-type silicon carbide material, has the second conductivity type, and has a doping concentration of 1.4×10 17 cm -3 , a width of 120 μm, and a depth of 0.8 μm; the multi-floating zone junction terminal extension terminal structure 103 includes 10 floating zones (N=10), and the width of the first floating zone is W 1 =12μm, the distance S between the nth floating area and the n+1th floating area ...
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Abstract
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