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Sub-threshold band-gap reference voltage source based on substrate bias regulation and control

A technology of reference voltage and sub-threshold current, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve the problems of narrow and limited temperature range, widen the linear range, low power consumption, and weaken the intensity of interference current. Effect

Active Publication Date: 2020-05-19
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
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Problems solved by technology

[0005] The purpose of the present invention is to provide a subthreshold bandgap reference based on substrate bias regulation for the problem that the existing low-voltage bandgap reference voltage source based on subthreshold technology has a narrow temperature range, especially at low temperatures. Voltage source, which not only meets the basic requirements of low voltage and low power consumption under the sub-threshold, but also can work effectively in a wide temperature range

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  • Sub-threshold band-gap reference voltage source based on substrate bias regulation and control

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Embodiment Construction

[0012] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0013] This embodiment provides a subthreshold bandgap reference voltage source based on substrate bias regulation, which is used to realize the subthreshold bandgap reference voltage source with low voltage and low power consumption under the TSMC180nm process and is applicable to a wide temperature range. Its circuit structure Such as figure 1 As shown, it includes the following parts: a sub-threshold current source, a PMOS transistor M connected by the gate and the source, and the substrate and the drain 6 Composition; PTAT generation circuit, composed of diode-connected PMOS tube M 7 Composition; CTAT generating circuit, composed of diode D 1 Composition; feedback circuit, composed of NMOS tube M 5 Composition; power supply rejection ratio enhancement module, composed of capacitor C c Composition; the reference voltage is implemented ...

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Abstract

The invention belongs to the technical field of analog integrated circuits, particularly relates to a sub-threshold band-gap reference voltage source based on substrate bias regulation and control, and aims to solve the problems that an existing low-voltage band-gap reference voltage source based on a sub-threshold technology is narrow in temperature range, and particularly is seriously limited ata low temperature. The sub-threshold band-gap reference voltage source comprises a sub-threshold current source, a PTAT generation circuit, a CTAT generation circuit, a feedback circuit and a power supply rejection ratio enhancement module, wherein a substrate of a PMOS tube forming the PTAT generation circuit is connected to a drain electrode of the PMOS tube such that substrate current generated by the PMOS tube is greatly reduced, a PTAT voltage solution can still be obtained according to the Kirchhoff current law at a low temperature, and the working temperature range of the reference voltage source is greatly expanded; meanwhile, the CTAT generation circuit composed of a diode D1 is adopted, it is guaranteed that CTAT voltage is not distorted at the low temperature, and the low-temperature adaptability of the reference voltage source is further guaranteed; and the power supply rejection ratio enhancement module composed of a capacitor Cc is adopted to effectively improve the power supply rejection ratio of the voltage source.

Description

technical field [0001] The invention belongs to the technical field of analog integrated circuits, and relates to a bandgap reference voltage source structure, in particular to a subthreshold bandgap reference voltage source with low voltage and low power consumption based on substrate bias regulation and applied to a wide temperature range. Background technique [0002] Bandgap reference voltage sources are widely used in various integrated circuit modules such as AD / DA, LDO, PLL, etc., and play a basic but key role; with the popularity of extremely low-power integrated circuit design and process With the advancement of medical electronics, Internet of Things and other fields, low-power reference voltage sources working at low voltages are required as a strong support for circuits. [0003] At present, the most widely used is the subthreshold-based bandgap reference voltage source technology, which uses the characteristics of MOSFET with extremely low drain-source current i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F1/56
CPCG05F1/561
Inventor 王政赵琦伟谢倩李云昊庄哲瀚
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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