A Subthreshold Bandgap Voltage Reference Based on Substrate Bias Control

Abstract

The invention belongs to the technical field of analog integrated circuits, and specifically relates to a subthreshold bandgap reference voltage source based on substrate bias regulation, which is used to solve the problem of narrow temperature range and low temperature range of the existing low voltage bandgap reference voltage source based on subthreshold technology. Especially at low temperatures the problem is severely limited. The invention includes: a sub-threshold current source, a PTAT generating circuit, a CTAT generating circuit, a feedback circuit and a power supply rejection ratio enhancement module, wherein the substrate of the PMOS transistor constituting the PTAT generating circuit is connected to its drain, which greatly reduces the Substrate current, so that Kirchhoff's current law at low temperature can still be solved by PTAT voltage, thus greatly expanding the working temperature range of the reference voltage source; at the same time, using the diode D 1 The CTAT generating circuit formed ensures that the CTAT voltage is not distorted at low temperatures, and further ensures the low temperature adaptability of the reference voltage source of the present invention; and adopts a capacitor C c The constituted power supply rejection ratio enhancement module effectively improves the power supply rejection ratio of the voltage source.

Description

technical field [0001] The invention belongs to the technical field of analog integrated circuits, and relates to a bandgap reference voltage source structure, in particular to a subthreshold bandgap reference voltage source with low voltage and low power consumption based on substrate bias regulation and applied to a wide temperature range. Background technique [0002] Bandgap reference voltage sources are widely used in various integrated circuit modules such as AD / DA, LDO, PLL, etc., and play a basic but key role; with the popularity of extremely low-power integrated circuit design and process With the advancement of medical electronics, Internet of Things and other fields, low-power reference voltage sources working at low voltages are required as a strong support for circuits. [0003] At present, the most widely used is the subthreshold-based bandgap reference voltage source technology, which uses the characteristics of MOSFET with extremely low drain-source current i...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a subthreshold bandgap reference based on substrate bias regulation for the problem that the existing low-voltage bandgap reference voltage source based on subthreshold technology has a narrow temperature range, especially at low temperatures. Voltage source, which not only meets the basic requirements of low voltage and low power consumption under the sub-threshold, but also can work effectively in a wide temperature range

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