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Quantum dot material, manufacturing method of the quantum dot material and display device of the quantum dot material

A quantum dot material and composite quantum technology, which is applied in the field of composite quantum dot materials, can solve the problems of quantum dot stability and limit the development of quantum dots.

Pending Publication Date: 2020-05-22
SHENGSEN NANO TECHONLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as a superior luminescent material, quantum dots still have many basic problems that have not been resolved. In particular, the stability of quantum dots has plagued many research units and has become one of the bottlenecks restricting the development of quantum dots.
Furthermore, the stability of quantum dots in other application fields, such as solar cells, biomarkers, and environmental pollution treatment, is also a great challenge.

Method used

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  • Quantum dot material, manufacturing method of the quantum dot material and display device of the quantum dot material
  • Quantum dot material, manufacturing method of the quantum dot material and display device of the quantum dot material
  • Quantum dot material, manufacturing method of the quantum dot material and display device of the quantum dot material

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Embodiment

[0084] Embodiment: composite quantum dot material

[0085] First, please refer to figure 1 , which is a schematic diagram of a composite quantum dot material in a preferred embodiment of the present invention. Such as figure 1 As shown, the composite quantum dot material 142 of this preferred embodiment includes: an optical core 421 , an inorganic ligand layer 1001 and a water-oxygen barrier layer 2001 .

[0086] Wherein, the optical core 421 can be a quantum dot made of a semiconductor material, such as: II-VI group quantum dots (CdSe or CdS), III-V group quantum dots ((Al, In, Ga) P, (Al ,In,Ga)As or (Al,In,Ga)N), II-VI quantum dots with shell-core structure (CdSe / ZnS), III-V quantum dots with shell-core structure (InP / ZnS), non-spherical II-VI quantum dots with an alloy structure (ZnCdSeS), a combination of any two of the above, or a combination of any two or more of the above.

[0087] The optical core 421 can also be of the chemical general formula MAX 3 Perovskite ...

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Abstract

The present invention discloses a quantum dot material comprising an optical core, an inorganic ligand layer which includes at least one SiOx material wrapped on the surface of the optical core, and awater-vapor barring layer wrapped on the surface of the inorganic ligand layer. The abovementioned water-vapor barring layer is formed by stacking a plurality of stacked structures including at leastone metal oxide in an irregular arrangement. In addition, a manufacturing method and application of the quantum dot material are also disclosed by the present invention.

Description

technical field [0001] The invention relates to a composite quantum dot material, a preparation method of the composite quantum dot material and a display device thereof, in particular to a composite quantum dot material capable of improving the stability and luminous efficiency of quantum dots, and a preparation method of the composite quantum dot material and its display device. Background technique [0002] Since quantum dots were produced, they have aroused widespread interest in the scientific and industrial circles due to their excellent photoelectric properties. Compared with traditional fluorescent materials, the luminescent properties of quantum dots have more advantages such as narrow half-peak width, small particles, no scattering loss, and adjustable spectrum with size. Application prospects. [0003] All units have invested a lot of time and labor costs in the research of quantum dot materials, so that the photoelectric performance of quantum dots has been con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/59C09K11/67C09K11/56C09K11/88C09K11/70C09K11/74C09K11/62C09K11/64C09K11/66B82Y20/00B82Y30/00B82Y40/00H01L51/50G02F1/13357
CPCC09K11/02C09K11/592C09K11/671C09K11/565C09K11/883C09K11/70C09K11/74C09K11/62C09K11/64C09K11/665C09K11/0883B82Y20/00B82Y30/00B82Y40/00G02F1/1336G02F1/133614H10K50/115
Inventor 李碧凤
Owner SHENGSEN NANO TECHONLOGY CO LTD