Three-dimensional memory and preparation method thereof
A memory, three-dimensional technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve the problems of unevenness, poor growth of semiconductor structures, and low reliability of three-dimensional memory, and achieve the effect of improving reliability and uniform thickness
Active Publication Date: 2021-08-06
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
However, in the process of forming an "L"-shaped semiconductor structure by epitaxial growth, there are problems of poor and uneven growth of the semiconductor structure, resulting in low reliability of the three-dimensional memory.
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[0042] Based on the defects of the traditional three-dimensional memory manufacturing method, this case provides a three-dimensional memory manufacturing method, which is separated along the process of forming an "L"-shaped semiconductor structure along the storage structure and the substrate, that is, the semiconductor structure and the substrate formed by the side walls of the storage structure Separate the semiconductor structure formed on it, which can improve the growth yield and uniformity of the "L"-shaped semiconductor structure, thereby improving the reliability of the three-dimensional memory. This application also provides a three-dimensional memory 100 prepared by using the method for preparing the three-dimensional memory.
[0043] Please also refer to figure 1 and Figure 2A-Figure 2I . figure 1 It is a schematic flow chart of the first embodiment of the manufacturing method of the three-dimensional memory 100 provided by the present application; Figure 2A-2I...
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The application discloses a three-dimensional memory and a preparation method thereof. The preparation method of the three-dimensional memory includes: providing a substrate; forming an isolation layer on the substrate; forming a storage structure including a barrier layer and a semiconductor layer in the three-dimensional memory; wherein, the barrier layer surrounds the periphery of the semiconductor layer; etching the The storage structure faces one side of the substrate to expose the semiconductor layer; a first semiconductor structure is formed along the exposed semiconductor layer; wherein the first semiconductor structure is connected to the semiconductor layer, and at least part of the isolation layer is located between the substrate and the first semiconductor structure between. The preparation method of the three-dimensional memory provided by the present application forms a semiconductor structure step by step, and improves the yield rate of the three-dimensional memory.
Description
technical field [0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a three-dimensional memory and a preparation method thereof. Background technique [0002] A three-dimensional (3Dimension, 3D) memory, as a typical vertical channel three-dimensional memory, generally includes a substrate and a stack structure on the substrate. In the manufacturing process of the three-dimensional memory, it is necessary to form multiple trenches through the stack structure in the stack structure, and then form an "L" shape semiconductor structure by epitaxial growth along the substrate and the storage structure through the trenches. However, in the process of forming an "L"-shaped semiconductor structure by epitaxial growth, there are problems of poor and uneven growth of the semiconductor structure, resulting in low reliability of preparing a three-dimensional memory. Contents of the invention [0003] Based on the problem of u...
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IPC IPC(8): H01L27/11568H01L27/11582H10B43/30H10B43/27
CPCH10B43/30H10B43/27
Inventor 耿万波薛磊薛家倩刘小欣黄波高庭庭
Owner YANGTZE MEMORY TECH CO LTD