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A light-emitting field effect transistor structure and preparation method based on poly f8bt crystal

A technology of field effect transistors and crystals, applied in the field of structure and preparation of light-emitting field effect transistors based on poly-F8BT crystals, can solve the problems of organic thin film transistor performance changes and poor coverage, and achieve fast directional transmission, improved coverage, and low The effect of turning on the voltage

Active Publication Date: 2021-01-05
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since small-molecule organic semiconductor thin films often exhibit random crystal orientations with poor coverage, which lead to significant changes in the performance of organic thin-film transistors (OTFTs), good alignment of the crystals is necessary to achieve OLET performance. consistency

Method used

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  • A light-emitting field effect transistor structure and preparation method based on poly f8bt crystal
  • A light-emitting field effect transistor structure and preparation method based on poly f8bt crystal
  • A light-emitting field effect transistor structure and preparation method based on poly f8bt crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Step 1. Clean the transparent conductive glass substrate, the substrate used is ordinary transparent glass

[0041] Use transparent as the substrate to carry out chemical cleaning. The cleaning steps are as follows: first, the substrate is ultrasonically oscillated with detergent and deionized water for 20 minutes, and then the same method is used to clean it with deionized water, acetone, and isopropanol for 20 minutes. Finally blow dry with nitrogen.

[0042] Put the cleaned glass into Plasma and treat it with ultraviolet oxygen for 10 minutes.

[0043] Step 2. Fix the cleaned and dried substrate and the mask plate, and place the sample in the evaporation coating machine, and vacuumize it to as low as 6.0×10 -4Pa, deposit a 30nm aluminum electrode on the substrate at a speed of 0.3nm / s; then turn off the evaporation source and switch the evaporation channel, and wait for the vacuum to be as low as 6.0×10 -4 Pa, deposit 3nm zinc oxide on the aluminum electrode at a s...

Embodiment 2

[0051] Step 1. Clean the transparent conductive glass substrate, the substrate used is ordinary transparent glass

[0052] Use transparent as the substrate to carry out chemical cleaning. The cleaning steps are as follows: firstly, the substrate is ultrasonically oscillated with detergent and deionized water for 30 minutes, and then the same method is used to clean the substrate with deionized water, acetone, and isopropanol for 50 minutes. Finally blow dry with nitrogen.

[0053] Put the cleaned glass into the Plasma and treat it with ultraviolet oxygen for 20 minutes.

[0054] Step 2. Fix the cleaned and dried substrate and the mask plate, and place the sample in the evaporation coating machine, and vacuumize it to as low as 5.0×10 -4 Pa, deposit a 40nm aluminum electrode on the substrate at a speed of 0.4nm / s; then turn off the evaporation source and switch the evaporation channel, and wait for the vacuum to be as low as 5.0×10 -4 Pa, deposit 4nm zinc oxide on the aluminu...

Embodiment 3

[0061] Step 1. Clean the transparent conductive glass substrate, the substrate used is ordinary transparent glass

[0062] Use transparent as the substrate to carry out chemical cleaning. The cleaning steps are as follows: firstly, the substrate is ultrasonically oscillated with detergent and deionized water for 10 minutes, and then the same method is used to clean it with deionized water, acetone, and isopropanol for 60 minutes. Finally blow dry with nitrogen.

[0063] Put the cleaned glass into Plasma, and treat it with ultraviolet oxygen for 40 minutes.

[0064] Step 2. Fix the cleaned and dried substrate and the mask plate, and place the sample in the evaporation coating machine, and vacuumize it to as low as 7.0×10 -4 Pa, deposit a 50nm aluminum electrode on the substrate at a speed of 0.5nm / s; then turn off the evaporation source and switch the evaporation channel, and wait for the vacuum to be as low as 7.0×10 -4 Pa, deposit 5nm zinc oxide on the aluminum electrode at...

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Abstract

The invention belongs to the field of preparation of novel electronic components, and relates to a structure and a preparation method of a light-emitting field effect tube based on poly-F8BT crystal. The invention combines a controlled evaporation self-assembly method with a dual-solvent scheme to obtain a crystal array with high crystal quality, the coverage of the film is also greatly improved, and the crystal width of the organic film is widened. The highly ordered crystal array obtained by the method of the invention as the light-emitting layer has lower turn-on voltage, higher external quantum efficiency and better light-emitting performance than organic light-emitting field-effect transistors based on ordinary thin films as the light-emitting layer. Compared with the thin film prepared by spin coating, the luminescent layer prepared by the double solvent evaporation method of the present invention can realize rapid and directional transport of charge carriers.

Description

technical field [0001] The invention belongs to the field of preparation of novel electronic components, and relates to a structure and a preparation method of a light-emitting field effect tube based on poly-F8BT crystal. Background technique [0002] Light-emitting field-effect transistor (LFET) is a light-emitting diode combined with transistor switching characteristics. It can directly access organic semiconductors to form charge recombination regions through spatially resolved probes, which can make organic devices more widely used in optoelectronic integrated circuits. However, the disadvantage of such devices is that the external quantum efficiency is not high. For higher efficiency, organic semiconductors are used to separate the excitons in the recombination layer from the charges in the adjacent charge transport and injection layers. Organic light-emitting field-effect transistors (OLETs) can combine the electrical switching properties of organic transistors with ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/54H01L51/56
CPCH10K71/15H10K85/141H10K50/30H10K50/11H10K71/00
Inventor 陈润泽李钰卜镜元
Owner DALIAN UNIV OF TECH