A kind of preparation method of conductive filler and semiconductive shielding material thereof

A technology of conductive fillers and shielding materials, which is applied in the field of preparation of conductive fillers and semiconductive shielding materials, which can solve the problems of low shielding efficiency of semiconductive shielding materials, achieve excellent electromagnetic shielding performance, improve shielding performance, and reduce density.

Active Publication Date: 2021-11-05
JIANGSU KEMAITE TECH DEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, semi-conductive shielding materials filled with carbon black have low shielding effectiveness at low frequencies

Method used

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  • A kind of preparation method of conductive filler and semiconductive shielding material thereof
  • A kind of preparation method of conductive filler and semiconductive shielding material thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] A preparation method of conductive filler, comprising the steps of:

[0053] 1) Wet ball milling of metal oxides: Fe 2 o 3 and NiO according to the mass ratio of 1.08:2.35, the total mass of metal oxides and anhydrous ethanol according to the mass ratio of 2:1, the total mass of grinding balls and metal oxides according to the mass ratio of 13:1.1, and then the weighed grinding balls Put it into the grinding jar, then add Fe 2 o 3 , NiO and absolute ethanol, and finally ball milled at a speed of 200r / min for 10h.

[0054] 2) Sieving the metal oxide: the metal oxide obtained in step 1) was dried in an oven at 110° C. for 4 hours, and then sieved through a 250-mesh gauze.

[0055] 3) Surface treatment of hollow glass microspheres: weigh the surface treatment liquid and hollow glass microspheres according to the mass ratio of 4:1, the surface treatment liquid is methyltriethoxysilane hydrolyzate with a mass fraction of 2%, and the hollow glass The microbeads were soak...

Embodiment 2

[0065] A preparation method of conductive filler, comprising the steps of:

[0066] 1) Wet ball milling of metal oxides: Fe 2 o 3 and NiO according to the mass ratio of 1.08:2.35, the total mass of metal oxides and anhydrous ethanol according to the mass ratio of 2:1, the total mass of grinding balls and metal oxides according to the mass ratio of 13:1.1, and then the weighed grinding balls Put it into the grinding jar, then add Fe 2 o 3 , NiO and absolute ethanol, and finally ball milled at a speed of 200r / min for 10h.

[0067] 2) Sieving the metal oxide: the metal oxide obtained in step 1) was dried in an oven at 110° C. for 4 hours, and then sieved through a 250-mesh gauze.

[0068] 3) Surface treatment of hollow glass microspheres: weigh the surface treatment liquid and hollow glass microspheres according to the mass ratio of 4:1, the surface treatment liquid is methyltriethoxysilane hydrolyzate with a mass fraction of 2%, and the hollow glass The microbeads were soak...

Embodiment 3

[0078] A preparation method of conductive filler, comprising the steps of:

[0079] 1) Wet ball milling of metal oxides: Fe 2 o 3 and NiO according to the mass ratio of 1.08:2.35, the total mass of metal oxides and anhydrous ethanol according to the mass ratio of 2:1, the total mass of grinding balls and metal oxides according to the mass ratio of 13:1.1, and then the weighed grinding balls Put it into the grinding jar, then add Fe 2 o 3 , NiO and absolute ethanol, and finally ball milled at a speed of 200r / min for 10h.

[0080] 2) Sieving the metal oxide: the metal oxide obtained in step 1) was dried in an oven at 110° C. for 4 hours, and then sieved through a 250-mesh gauze.

[0081] 3) Surface treatment of hollow glass microspheres: weigh the surface treatment liquid and hollow glass microspheres according to the mass ratio of 4:1, the surface treatment liquid is methyltriethoxysilane hydrolyzate with a mass fraction of 2%, and the hollow glass The microbeads were soak...

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Abstract

The invention belongs to the field of conductive shielding materials, and relates to a preparation method of a conductive filler and a semiconductive shielding material. The present invention has prepared a kind of Ag / Fe-Ni / hollow glass microsphere conductive filler, adopts high-temperature reduction metal oxide technology at first, to hollow glass microsphere multiple coating iron-nickel alloy, then adopts chemical reduction method, to iron-nickel Alloy-coated glass microspheres are coated with silver multiple times. By setting the coating times in the preparation process of the intermediate coating layer, the Fe 2 o 3 The mass ratio to NiO and the amount of the prepared conductive filler make the semi-conductive shielding material have excellent shielding performance at low or high frequencies, the shielding effectiveness at low frequencies is 10-19dB, and the shielding effectiveness at high frequencies is 30-44dB . After the conductive filler of the present invention replaces part of the carbon black, it not only cooperates with the carbon black in conductive shielding, but also reduces the total number of fillers, thereby ensuring the weight reduction of the semiconductive shielding material.

Description

technical field [0001] The invention belongs to the field of conductive shielding materials, and relates to a preparation method of a conductive filler and a semiconductive shielding material. Background technique [0002] With the continuous improvement of my country's power system, various large-scale hydropower stations, large-scale intensive development of coal, hydropower, nuclear energy, and renewable new energy power stations are all under construction, which leads to the demand for medium and high voltage power cables year by year raised. IEC 502 stipulates that cables with a rated voltage above 1.8 / 3.0kv and insulated with polyvinyl chloride and ethylene propylene rubber, and a rated voltage above 3.6 / 6.0kv must use inner and outer semi-conductive shielding layers. [0003] Foreign countries have started research on semi-conductive shielding materials since the 1950s. After the 1970s, foreign countries have developed semi-conductive shielding materials with practica...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08K9/10C08K7/28C08L23/08C08L23/12C08L53/02C08K13/06C08K7/14C08K3/04
CPCC08K7/28C08K9/10C08K2201/001C08K2201/003C08K2201/004C08L23/0853C08L2205/035C08L23/12C08L53/02C08K13/06C08K7/14C08K3/04
Inventor 虞家桢
Owner JIANGSU KEMAITE TECH DEV CO LTD
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