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igbt chip and semiconductor power module

A chip and integrated block technology, applied in semiconductor devices, output power conversion devices, AC power input conversion to DC power output, etc., can solve the problem of unfixed proportional relationship between detection current and working current, low detection current accuracy and sensitivity and other problems to achieve the effect of avoiding deviation and improving accuracy

Active Publication Date: 2022-05-20
JILIN SINO MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, current real-time monitoring is mainly realized by integrating the current sensor in the IGBT device chip and using the mirror current detection principle, such as Kelvin Kelvin connection, but the detection current curve obtained in this way does not correspond to the working current curve , that is, the proportional relationship between the obtained detection current and the working current is not fixed, resulting in relatively low accuracy and sensitivity of the detection current

Method used

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Embodiment 1

[0037] An embodiment of the present invention provides an IGBT chip, Figure 5 A schematic structural diagram of an IGBT chip provided by an embodiment of the present invention, such as Figure 5 As shown, the IGBT chip is provided with: a working area 10, a current detection area 20 and a grounding area 30; wherein, the IGBT chip also includes a first surface and a second surface, and the first surface and the second surface are oppositely arranged The first surface is provided with the common gate unit 100 of the working region 10 and the current detection region 20, and the first emitter unit 101 of the working region 10, the second emitter unit 201 of the current detection region 20 and the third emitter A pole unit 202, wherein the third emitter unit 202 is connected to the first emitter unit 101, and the common gate unit 100 is separated from the first emitter unit 101 and the second emitter unit 201 by etching; The second surface is provided with the common collector u...

Embodiment 2

[0050] On the basis of the above embodiments, the embodiment of the present invention also provides a semiconductor power module, such as Figure 15 As shown, the semiconductor power module 50 is configured with the above-mentioned IGBT chip 51 , and further includes a driving integrated block 52 and a detection resistor 40 .

[0051] Specifically, such as Figure 16As shown, the IGBT chip 51 is arranged on the DCB board 60, and the OUT port of the driving integrated block 52 is connected to the common gate unit 100 in the IGBT chip 51 through the module lead terminal 521, so as to facilitate the operation of the driving work area 10 and the current detection area 20; The Si port is connected to the detection resistor 40 through the module lead terminal 521 to obtain the voltage on the detection resistor 40; The other end of the resistor 40 is also respectively connected to the second emitter unit 201 of the current detection area and the ground area, so as to obtain the meas...

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Abstract

The invention provides an IGBT chip and a semiconductor power module. The IGBT chip is provided with: a working area, a current detection area and a grounding area; An emitter unit, a second emitter unit and a third emitter unit in the current detection area, the third emitter unit is connected to the first emitter unit, and the common gate unit is connected to the first emitter unit and the second emitter unit Separated by etching; on the second surface, there is a common collector unit of the working area and the current detection area; the current detection area and the grounding area are respectively used to connect with the detection resistor, so that a voltage is generated on the detection resistor , and detect the working current in the working area according to the voltage. The present application avoids the deviation of the gate electrode due to the change of the ground potential, and improves the accuracy of detecting the current.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an IGBT chip and a semiconductor power module. Background technique [0002] At present, semiconductor power modules are mainly widely used in chopper or inverter circuits, such as power systems such as rail transit, electric vehicles, wind power and photovoltaic power generation, and home appliances. Among them, the semiconductor power module is mainly a modular semiconductor product formed by IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) device and FWD (Freewheeling Diode, freewheeling diode) packaged through a specific circuit bridge. In practical applications, in order to ensure the safe and reliable operation of the semiconductor power module, current sensors and temperature sensors are usually added to the DCB (Direct Bonding Copper, ceramic copper-clad board) board of the semiconductor power module, so as to realize the control o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R19/00H02M1/00H02M7/00
CPCG01R19/00G01R19/0046H02M1/00H02M7/003H01L2224/0603
Inventor 左义忠
Owner JILIN SINO MICROELECTRONICS CO LTD