A Modeling Method of igbt Module for Electromagnetic Compatibility Simulation

Abstract

The invention discloses an IGBT module modeling method for electromagnetic compatibility simulation. The method performs global modeling on the external characteristics of the IGBT module under five working conditions, widens the scope of application of the working conditions, and realizes a wide range of models. The characteristics of applicability and the dynamic and static characteristics of anti-parallel diodes are also considered, and the device-level behavior model of IGBT modules containing anti-parallel diodes is uniformly established. In addition, the present invention deduces the approximate current waveform of the anti-parallel diode through the collector current, collector-emitter voltage and test circuit parameters of the IGBT module, reducing the number of current probes used in the test process.

Description

technical field [0001] The invention belongs to the technical field of power electronic simulation, and in particular relates to an IGBT module modeling method for electromagnetic compatibility simulation. Background technique [0002] Insulated-gate bipolar transistor (Insulated-GateBipolarTransistor, IGBT) combines the advantages of power MOSFET and bipolar transistor, with its high input impedance, high withstand voltage, large output current, small on-state resistance, fast switching speed and other characteristics. widely used in power electronic devices and systems. Usually, anti-parallel PIN diodes are connected at both ends of the IGBT as a current freewheeling path, thereby forming a complete IGBT module and realizing the basic function of energy conversion. With the increase of switching frequency and power density, the voltage change rate (dv / dt) at both ends of the IGBT module and the current change rate (di / dt) flowing through the IGBT module are extremely larg...

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Problems solved by technology

[0004] For the establishment of transient models of power switching devices, Zhao Zhengming and others from Tsinghua University wrote in the literature "Multi-time scale transient model of power switching devices (Ⅰ) / / Switching characteristics and transient modeling [J]. Journal of Electrotechnical Society, 2017 (12)" proposed a piecewise linear model based on the physical mechanism of the switching action of power switching devices - the IGBT broken line model. Under certain simplified assumptions, the turn-on and turn-off transient processes are divided into four stages. , using a suitable linear function or exponential function to describe the collector-emitter voltage, collector-emitter current, and gate voltage at each stage; but this method is not suitable for simulation calculations at small time scales, and is only suitable for Simulation calculation

[0005] Zhang Dong and others from the Institute of Electrical Engineering, Chinese Academy of Sciences proposed an IGBT model for electromagnetic interference simulation in the document "Interior permanent magnet motor drive system modeling for electromagnetic interference analysis [C] / / 201417th International Conference on Electrical Machines and Systems (ICEMS).IEEE, 2014:1498-1504". Based on the idea of ​​efficiency, an equivalent circuit model including the forward conduction part of the IGBT and the anti-parallel diode part is established. The equivalent circuit model is composed of resistors, capacitors, ideal diodes, and ideal switches. The parameters required for the model pass through the IGBT single pulse of the resistive load. Experimental extraction; since the model contains three ideal switches, resulting in a large number of control variables, the control unit that controls the on-off action of the model during the simulation process is more complicated, and the model is also only suitable for simulation under a single working condition calculate

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