Resistive random access memory and manufacturing method thereof

Abstract

The invention discloses a resistive random access memory and a manufacturing method thereof. The resistive random access memory comprises a substrate, and a first electrode, a resistive dielectric layer, a barrier layer and tunneling layer and a second electrode which are sequentially located on the substrate. The barrier layer and tunneling layer comprises a multi-layer two-dimensional material,and the two-dimensional material is one of the following materials: HBN, MoSe2, MoTe2, WS2, WSe2 or WTe2. The multi-layer two-dimensional material is inserted between the second electrode and the resistive dielectric layer. In the setting process, oxygen ions can be effectively prevented and limited from diffusing into the second electrode and generating an oxidation reaction with the second electrode, consumption of the oxygen ions is reduced, and meanwhile the tunneling effect of the two-dimensional material is used for improving the low-resistance-state resistance. In the resetting process,the second electrode does not need to serve as an oxygen storage layer to provide oxygen ions, enough oxygen ions can participate in oxygen vacancy compounding under the condition that large voltageis not applied to generate large current, and complete resetting can be achieved. The cycle characteristic of the device is integrally improved, and the programming energy consumption is reduced.

Description

technical field [0001] The disclosure belongs to the technical field of semiconductors and integrated devices, and relates to a resistive memory and a manufacturing method thereof. Background technique [0002] With the rapid development and popularization of mobile smart terminals, the Internet of Things, and wearable devices, the market demand for non-volatile memory is increasing and its performance requirements are becoming more and more stringent. In addition, with the continuous shrinking of semiconductor process technology nodes, the performance degradation of flash memory (Flash) devices based on charge storage is becoming more and more serious, which promotes the next generation of non-volatile devices based on new material structures and new storage mechanisms. Memory development and research. [0003] Among many new non-volatile memories, RRAM has relatively low programming energy consumption, fast read and write speed, good scalability, good retention characteri...

AI Technical Summary

Problems solved by technology

However, the current resistive memory has the problem of incomplete reset (reset is also called reset) (RESET), which may lead to device failure as the number of cycles increases

In addition, there is also the problem of relatively high programming energy consumption during the reset process.

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