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A method for synthesizing intrinsic magnetic topological insulators

A topological insulator and magnetic technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve problems such as difficult, tedious and complicated growth process, slow growth process, etc., to achieve accurate and controllable layer number, thin film single Good crystallinity, precise and controllable composition

Active Publication Date: 2021-08-27
NAT INNOVATION INST OF DEFENSE TECH PLA ACAD OF MILITARY SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But this growth method not only requires the researchers to be able to precisely grow atomically flat Bi 2 Te 3 and MnTe, and the growth process is more cumbersome and complicated, more difficult, and the growth process is slow

Method used

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  • A method for synthesizing intrinsic magnetic topological insulators
  • A method for synthesizing intrinsic magnetic topological insulators
  • A method for synthesizing intrinsic magnetic topological insulators

Examples

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Embodiment 1

[0035] The method for the synthesis intrinsic magnetic topological insulator of the present embodiment comprises the following steps: S1. substrate is placed in MBE vacuum chamber to remove water vapor and organic matter; S2. substrate, Mn evaporation source, Bi evaporation source, Te evaporation source Preheating to the target temperature; S3. Growing crystals on the substrate by molecular beam epitaxy co-deposition technology.

[0036] In this embodiment, the preferred substrate is Al 2 o 3 substrate; step S1 specifically includes: Al 2 o 3 The substrate is placed in the MBE vacuum chamber whose air pressure is lower than the first preset air pressure, heated to the first preset temperature range, and degassed until the air pressure in the MBE vacuum chamber returns to be lower than the first preset air pressure; the first The preset air pressure is 2.0×10 -10 mBar; the first preset temperature range is 600°C-800°C.

[0037] In this embodiment, further preferably, step ...

Embodiment 2

[0044] The method for the synthesis intrinsic magnetic topological insulator of the present embodiment comprises the following steps: S1. substrate is placed in MBE vacuum chamber to remove water vapor and organic matter; S2. substrate, Mn evaporation source, Bi evaporation source, Te evaporation source Preheating to the target temperature; S3. Growing crystals on the substrate by molecular beam epitaxy co-deposition technology.

[0045] In this embodiment, the preferred substrate is a Si substrate; step S1 specifically includes: S1.1 placing the Si substrate in an MBE vacuum chamber whose air pressure is lower than the second preset air pressure, and directly heating to the sixth preset temperature range , and degas until the air pressure in the MBE vacuum chamber returns to be lower than the second preset air pressure; the second preset air pressure is 2.0×10 -10 mBar; the sixth preset temperature range is 450°C-600°C; S1.2 Heat the Si substrate to the preset seventh tempera...

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Abstract

The invention discloses a method for synthesizing an intrinsic magnetic topological insulator, comprising the following steps: S1. placing a substrate in an MBE vacuum chamber and heating to remove water vapor and organic matter; S2. evaporating the substrate, Mn evaporation source, and Bi source and Te evaporation source are preheated to the target temperature; S3. growing a single crystal thin film on the substrate by molecular beam epitaxy co-deposition technology. The invention has the advantages of simplicity, easy implementation, good monocrystalline film quality, uniform film quality, large single crystal film area, fast preparation speed, less time-consuming, precise and controllable composition, and precise and controllable number of layers.

Description

technical field [0001] The invention relates to the field of magnetic topological materials, in particular to a method for synthesizing intrinsic magnetic topological insulators. Background technique [0002] In recent years, the interaction between topology and symmetry, topology and magnetism is an important and hot research direction in condensed matter physics and materials science. As a basic symmetry, time-reversal symmetry plays a key role in the topology of materials; when there is magnetism, this time-reversal symmetry will be destroyed; at this time, the system material generally has Complex magnetic states, such as various magnetic structures and magnetic domains, etc.; these complex magnetic states will increase the difficulty of experimental research and regulation. Interestingly, when the magnetism exists, it will cause various exotic topological quantum states in this type of material: quantum anomalous Hall effect, topological axion state and Majorana fermio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/02C30B29/46
CPCC30B23/02C30B29/46
Inventor 王振宇江天谢向男童明玉尤洁于亚运马小明
Owner NAT INNOVATION INST OF DEFENSE TECH PLA ACAD OF MILITARY SCI
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