Photoelectric triode anti-saturation circuit

A photoelectric triode and circuit technology, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of easy saturation and low conversion rate of photoelectric triodes, and achieve the effects of increasing absorption, improving conversion efficiency, and shielding electromagnetic interference signals

Active Publication Date: 2020-06-19
上海权策微电子技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the photoelectric triode is easily saturated, making it unusable in a strong light environment, but the conversion rate of the photoelectric triode to infrared light is low under strong light

Method used

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  • Photoelectric triode anti-saturation circuit
  • Photoelectric triode anti-saturation circuit

Examples

Experimental program
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Effect test

Embodiment 1

[0025] see Figure 1-Figure 3 , the present invention provides a phototransistor anti-saturation circuit, its structure includes a phototransistor 1, an input pin 2, and an output pin 3, and the bottom of the phototransistor 1 is provided side by side with an input pin 2 and an output pin 3 , the input pin 2 and the output pin 3 are both connected to the phototransistor 1.

[0026] The phototransistor 1 is composed of a tube body 1a, a tube cap 1b, a protruding piece 1c, an astigmatism mechanism 1d, a dust cover 1e, and a tube core 1f. The bottom end of the tube body 1a is provided with a tube cap 1b. The tube body 1a and the tube cap 1b are movably connected, the surface of the tube cap 1b is provided with a protruding piece 1c, the described tube cap 1b and the protruding piece 1c are an integrated structure, and the top end of the tube body 1a is provided with Dustproof cover 1e, the pipe body 1a and the dustproof cover 1e are fastened together, the astigmatism mechanism 1...

Embodiment 2

[0033] see Figure 1-Figure 5 , the present invention provides an anti-saturation circuit for a photoelectric triode. The tube core 1f is composed of a base layer 1f1, a collector layer 1f2, an insulating layer 1f3, and an emitter 1f4. The base layer 1f1 is provided with a collector layer 1f2. The base layer 1f1 and the collector layer 1f2 are fixedly connected, the top surface of the collector layer 1f2 is provided with an insulating layer 1f3, the collector layer 1f2 is glued to the insulating layer 1f3, and the middle of the top of the insulating layer 1f3 is An emitter 1f4 is arranged on the position, and the insulating layer 1f3 is connected with the emitter 1f4.

[0034] Two or more emitting layers 1f21 are arranged on the inner surface of the collecting layer 1f2, and the collecting layer 1f2 is connected to the emitting layer 1f21.

[0035] The optical filter 1d2, the convex lens 1a1, and the emitter 1f4 are all parallel to each other.

[0036] The emitter 1f4 is ele...

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Abstract

The invention discloses a photoelectric triode anti-saturation circuit. The circuit structurally comprises a photoelectric triode, an input pin and an output pin; the photoelectric triode is composedof a tube body, a tube cap, a protruding piece, a light scattering mechanism, a dustproof cover and a tube core. The photoelectric triode absorbs and scatters the wavelength of strong light to the bottom end by using the light scattering mechanism; the problem that a photoelectric triode cannot be used in a strong light environment is avoided; the light rays are re-gathered and projected on the emitting electrode through convex lens; in the presence of external electromagnetic interference, the shielding layer and the tube core are consistent in potential, and thus the anti-interference effectis achieved; electromagnetic interference signals can be shielded on the premise that light transmission is guaranteed; the multiple emission layers are implanted into the current collection layer, so that the current collection layer can fully convert infrared light; absorption of the tube core to the infrared light is improved; and the conversion efficiency of the photoelectric triode to the infrared light is improved.

Description

technical field [0001] The invention relates to the field of SMD chip triodes, in particular to a photoelectric triode anti-saturation circuit. Background technique [0002] At present, the infrared receiver module (IRM) is to seal the photodiode and the infrared receiving processing chip on the packaging bracket, and then bend the bracket to form an inner shield, and then encapsulate it with a filter plastic compound to become an independent device. If a phototransistor is used instead of a photodiode, since the triode has its own magnification, the receiving sensitivity can be improved. However, the photoelectric triode is easily saturated, making it unusable in a strong light environment, but the conversion rate of the phototransistor to infrared light is low under strong light. Contents of the invention [0003] Aiming at the deficiencies of the prior art, the present invention is realized through the following technical scheme: a kind of phototransistor anti-saturati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/11H01L31/0232
CPCH01L31/0203H01L31/02325H01L31/1105
Inventor 向军
Owner 上海权策微电子技术有限公司
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