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Output pulse width adjustable laser and setting method thereof

A laser and pulse width technology, applied in the field of lasers, which can solve the problems of changing the properties of the output beam of the crystal, the difficulty of keeping the properties of the output beam consistent, and the easy damage of the joint.

Pending Publication Date: 2020-06-19
SHENZHEN TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

1. Crystals with different thicknesses have different cavity lengths, resulting in changes in the resonance mode, which will directly change the output beam properties of the crystals; 2. The joints of the crystals are cut into oblique surfaces and glued together, the joints are easy to damage, and the different lengths of the crystals lead to different pump absorption rates. Due to different thermal lens effects, it is difficult to maintain consistent output beam properties

Method used

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  • Output pulse width adjustable laser and setting method thereof
  • Output pulse width adjustable laser and setting method thereof
  • Output pulse width adjustable laser and setting method thereof

Examples

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Effect test

Embodiment 1

[0039] refer to figure 1 , figure 1 It is a schematic frame diagram of a specific embodiment of the output pulse width adjustable laser in the embodiment of the present invention. A laser with adjustable output pulse width, comprising: a pump source 100, several microchip crystals 400, and a crystal carrier 300; the pump source 100 is used to provide a pump beam; the microchip crystal 400 is used to receive the pump beam, and output laser light; several hollow channels are set in the crystal carrier 300; several microchip crystals 400 are correspondingly arranged in the several hollow channels.

[0040] The above-mentioned output pulse width adjustable laser further includes: a pump coupling element 200 for shaping the pump beam to adjust the spot size and depth of the pump beam. The pump coupling element 200 can be composed of a plano-convex lens or an aspheric lens or a light guide rod. In this embodiment, the specific structure of the pump coupling element 200 may be com...

Embodiment 2

[0044] refer to figure 2 , figure 2 It is a structural schematic diagram of a specific embodiment of the output pulse width adjustable laser in the embodiment of the present invention. The crystal carrier 300 includes a variety of implementations. The crystal carrier 300 in this embodiment is a wheel-type crystal carrier 301, that is, the crystal carrier 300 is a wheel with several hollow passages, and several microchip crystals 400 correspond to Set in the hollow channel.

[0045]In this embodiment, the pumping source 100 is a fiber output semiconductor laser 101 to provide a pumping beam. A coupling element is also provided between the pump source 100 and the crystal carrier 300 to couple the pump beam to the microchip crystal 400 disposed on the crystal carrier 300 . The laser crystal specifications in different microchip crystals 400 are the same, and the size of the saturable absorber is the same but the doping concentration is different, so different microchip cryst...

Embodiment 3

[0049] Please also refer to figure 1 , image 3 , image 3 It is a schematic structural diagram of a specific embodiment of an output pulse width adjustable laser in an embodiment of the present invention. Compared with the output pulse width adjustable laser in the second embodiment, the pump source 100 of the output pulse width adjustable laser in this embodiment is a fast-axis compressed single-tube semiconductor laser 102 . In this embodiment, the pumping source 100 is a fast-axis compressed single-tube semiconductor to provide a pumping beam. A coupling element is also provided between the pump source 100 and the crystal carrier 300 to couple the pump beam to the microchip crystal 400 disposed on the crystal carrier 300 . The pump coupling element 200 is composed of two plano-convex lenses arranged coaxially. The crystal carrier 300 in this embodiment is a wheel-type crystal carrier 301 .

[0050] Each microplate crystal 400 includes a laser crystal and a saturable a...

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Abstract

The invention discloses an output pulse width adjustable laser and a setting method thereof. The output pulse width adjustable laser comprises a pumping source, a plurality of microchip crystals and acrystal carrier, wherein the pumping source is used for providing a pumping light beam; the microchip crystals are used for receiving the pumping light beam and outputting laser; a plurality of hollow channels are formed in the crystal carrier; and a plurality of microchip crystals are respectively and correspondingly arranged in a plurality of hollow channels. The invention further discloses thesetting method of the output pulse width adjustable laser. With application of the output pulse width adjustable laser and the setting method thereof, different microchip crystals can be switched through the crystal carrier to change the loss in the cavity without changing parameters such as the cavity length of the laser and the pumping absorptivity so that the function of rapidly (within several seconds) switching different output pulse widths without changing the property of the output light beam is realized.

Description

technical field [0001] The invention relates to the field of laser technology, in particular to a laser with adjustable output pulse width and a setting method thereof. Background technique [0002] At present, microchip passively Q-switched lasers are used in many fields due to their advantages of small size and low cost. Usually, the pumping structure and crystal structure of a microchip passive Q-switched laser determine the main output parameters of the laser, such as pulse width, pulse energy, output spot size, and divergence angle. In many occasions where microchip lasers are used, it is required to quickly switch between different output pulse widths without changing the properties of the output beam, such as spot size and divergence angle. If the beam properties are changed, the optical system needs to be readjusted. [0003] The pulse width of the microchip passively Q-switched laser is related to the cavity length and loss, and is mainly determined by the crystal...

Claims

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Application Information

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IPC IPC(8): H01S3/05H01S3/106H01S3/094H01S3/11
CPCH01S3/05H01S3/094H01S3/106H01S3/11
Inventor 郭晓杨周沧涛阮双琛
Owner SHENZHEN TECH UNIV
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