Semiconductor device
A semiconductor, conductive type technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve the problems of semiconductor device damage, easy surge peak voltage, surge peak voltage, etc.
Active Publication Date: 2020-06-26
DENSO CORP
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
That is, in such a semiconductor device, in the recovery state, the depletion layer formed between the drift layer and the base layer extends toward the lower electrode side (that is, the back side of the semiconductor substrate), and the surge peak voltage at the time of recovery ( Hereinafter referred to as surge peak voltage) tends to become larger
Also, since the surge peak voltage becomes large, there is a concern that the semiconductor device may be damaged
Method used
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no. 1 Embodiment approach
[0036] A first embodiment will be described with reference to the drawings. In addition, the semiconductor device of this embodiment is preferably used as a power switching element used in a power supply circuit such as an inverter or a DC / DC converter.
[0037] Such as figure 1 As shown, the semiconductor device has a cell region 1 and a peripheral region 2 surrounding the cell region 1 . In this embodiment, there are two unit regions 1 . Furthermore, in each cell region 1, an IGBT region 3 having an IGBT element 3a and an FWD region 4 having an FWD element 4a are formed. That is, the semiconductor device according to the present embodiment is an RC (abbreviation for Reverse Conducting)-IGBT in which the IGBT region 3 and the FWD region 4 are formed in the same chip.
[0038] In the present embodiment, IGBT regions 3 and FWD regions 4 are alternately formed in one direction in each cell region 1 . Specifically, each of the IGBT regions 3 and the FWD regions 4 is formed as...
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Provided is a semiconductor device in which an IGBT region (3) having an IGBT element (3a) and an FWD region (4) having an FWD element (4a) are formed on a common semiconductor substrate (10), whereina plurality of carrier injection layers (24) that are electrically connected to a second electrode (23) and constitute a PN junction with a field stop layer (20), are formed in a cathode layer (22).Furthermore, when an impurity concentration of the field stop layer (22) is considered to be Nfs [cm-3], and the length, along the planar direction of the semiconductor substrate (10), of the shortestportion of a carrier injection layer (24) is considered to be L1 [[mu]m], the plurality of carrier injection layers (24) are set such that L1>6.8*10-16*Nfs+20 holds true.
Description
[0001] Cross-references to related applications [0002] This application is based on Japanese Patent Application No. 2017-221142 filed on November 16, 2017, and the description thereof is incorporated herein by reference. technical field [0003] The present invention relates to a semiconductor device in which an insulated gate bipolar transistor (hereinafter referred to as IGBT) element and a freewheeling diode (hereinafter referred to as FWD) element having an insulated gate structure are formed on a common semiconductor substrate. Background technique [0004] Conventionally, as a switching element used in an inverter (inverter), for example, a semiconductor device in which an IGBT region having an IGBT element and a FWD region having an FWD element are formed on a common semiconductor substrate has been proposed (for example, refer to Patent Document 1). [0005] Specifically, in this semiconductor device, in the configuration N - A base layer is formed in the surface...
Claims
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IPC IPC(8): H01L29/739H01L21/8234H01L27/06H01L27/088H01L29/78
CPCH01L29/78H01L29/861H01L29/7813H01L29/7397H01L29/0834H01L27/0727H01L27/0664H01L29/0638H01L29/1095H01L29/8613
Inventor 村川浩一高桥茂树住友正清
Owner DENSO CORP