Super-resolution photoetching device based on alignment detection and control of dark field moire fringes

Abstract

The invention discloses a super-resolution photoetching device based on the alignment detection and control of dark field moire fringes. The device comprises a precise environment control system, an active vibration isolation platform, a supporting frame, a light source, an alignment detection system, a mask deformation correction system, a photoetching lens module, a wafer bearing table and a control system. According to the device, the nano-scale online alignment detection is achieved through a dark field moire fringe diffraction imaging technology, the alignment deviation of a mask and a substrate is eliminated by controlling a nano motion table and a mask deformation correction system, and the multi-layer pattern overlay exposure is achieved; the feedback control is carried out througha white light gap measurement module, a precision displacement table, a nanometer displacement table and a mask deformation module, and the super-resolution multi-layer graph overlay exposure photoetching function is achieved.

Description

technical field [0001] The invention relates to a super-resolution photolithography device based on dark-field moiré fringe alignment detection and control, and belongs to the technical field of improvement and innovation of super-resolution photolithography devices. Background technique [0002] With the rapid development of the semiconductor IC industry, IC integrated circuits continue to develop in the direction of miniaturization and higher storage density, and there is an urgent need to improve the photolithography process. The resolution and exposure efficiency of the photolithography process determine the resolution and production efficiency of the production of integrated circuit chips. The photolithography process is to transfer the pattern on the mask plate to the photoresist on the surface of the substrate through exposure operation, and then transfer the pattern to the substrate through developing, etching and other processes. Due to the effects of diffraction a...

AI Technical Summary

Problems solved by technology

Due to the short working distance of SP lithography, the alignment method of projection lithography cannot be successfully applied to SP lithography

In addition, due to the small tool distance between the mask and the substrate, there is a force in the micro-contact state between the mask and the substrate. Under such a small gap, the distance between the mask pattern and the existing pattern on the substrate can be accurately detected and controlled. Alignment deviation, ensuring the stability and reliability of lithography effect has become a new technical problem, which limits the application scenarios of SP lithography

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