A kind of cleaning method of plasma enhanced chemical vapor deposition chamber
An enhanced chemical and vapor deposition technology, applied in the cleaning field of ion-enhanced chemical vapor deposition chambers, can solve the problems of increasing the risk of silicon oxide blockage, contamination deposition, etc., to extend equipment maintenance cycle, reduce particle pollution, and eliminate The effect of being polluted or even blocked
Active Publication Date: 2022-06-24
JIANGSU LEUVEN INSTR CO LTD
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It is difficult for scientific research institutions such as universities and research institutes to afford NF due to factors such as funding constraints. 3 As the high price of cleaning gas, fluorocarbon gas is generally used to remove SiO and SiN, oxygen is used to remove silicon oxide to SiO, and the combination of the two becomes cleaning gas, O 2 The introduction of carbon solves the problem of fouling deposition, but due to the silane (SiH 4 ) reacts easily with oxygen to form non-volatile silicon dioxide (SiO 2 ), which increases the risk of the gas path being blocked by silicon oxide
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[0015] In order to make the objectives, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It should be understood that the specific The embodiments are only used to explain the present invention, and are not intended to limit the present invention. The described embodiments are only some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0016] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "vertical", "horizontal", etc. is based on the orient...
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The invention discloses a cleaning method for a plasma-enhanced chemical vapor deposition chamber. The cleaning gas used includes CF 4 and N 2 O. The invention can effectively solve the cleaning problem of the Si-based plasma-enhanced chemical vapor deposition chamber used in small research institutions, can eliminate the risk of gas path being polluted or even blocked, improves the reliability of the equipment, prolongs the maintenance period of the equipment, and improves the production efficiency. Reduce particle pollution and improve product quality.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a cleaning method for a plasma-enhanced chemical vapor deposition chamber. Background technique [0002] Coating by silane-based Plasma Enhanced Chemical Vapor Deposition (PECVD) will not only deposit a desired film on the wafer surface, but also coat a thin film or silicene on the inner wall of the chamber and the surface of the hot stage. (silence) polymer, which is not expected in the process, a PECVD process chamber with cold wall is specially designed to reduce the deposition of thin films on the inner wall of the chamber and prolong the maintenance and maintenance cycle of the equipment. [0003] Many good methods are used to reduce the deposition of thin film material on the inner wall of PECVD, but the effect is still not ideal. For this reason, a cleaning process is introduced above. For silicon (Si) PECVD, fluorine (F)-based gas is generally used for cleaning, b...
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IPC IPC(8): H01J37/32H01L21/67
CPCH01J37/32862H01L21/67023
Inventor 刘自明崔虎山邹志文蒋中原车东晨王珏斌陈璐许开东
Owner JIANGSU LEUVEN INSTR CO LTD