Groove-type device and preparation method thereof
A trench type and device technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of potential difference increase and electric field enhancement near the bottom of the trench, so as to enhance the carrier injection effect and manufacture The effect of small process changes and reduced conduction loss
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Embodiment 1
[0040] A trench type device includes a substrate 101, a body region 201 is disposed on the substrate 101, a second conductive layer 501 is disposed on the body region 201, and a first insulating layer 501 is disposed in the second conductive layer 501. A dielectric layer 301, a gate dielectric layer 302 is arranged under the first insulating dielectric layer 301, a second insulating dielectric layer 303 is arranged under the gate dielectric layer 302, the first insulating dielectric layer 301, the gate dielectric layer 302 and the first insulating dielectric layer 302 The two insulating dielectric layers 303 are connected, the gate dielectric layer 302 is located in the body region 201, the second insulating dielectric layer 303 is located in the substrate 101, and the gate dielectric layer 302 and the second insulating dielectric layer 303 are provided with The first conductive layer 401 , the depth of the first conductive layer 401 is not less than the depth of the body regio...
Embodiment 2
[0048] A method for preparing a grooved device, comprising the steps of:
[0049] Step 1: growing a field oxide layer on the substrate 101, not limited to the silicon substrate 101, such as image 3 shown;
[0050] Step 2: using a photolithography plate to expose part of the field oxide layer and etch it away to expose the substrate 101, such as Figure 4 shown;
[0051] Step 3: performing trench etching on the exposed substrate 101, such as Figure 5 shown;
[0052] Step 4: Deposit to obtain the second insulating dielectric layer 303, such as Figure 6 shown;
[0053] Step 5: Etching part of the aforementioned second insulating dielectric layer 303, and retaining part around and at the bottom of the trench, such as Figure 7 shown;
[0054] Step 6: growing the gate dielectric layer 302 on the side walls of the trench and the upper surface of the substrate 101, such as Figure 8 shown;
[0055] Step 7: Deposit to obtain the first conductive layer 401, such as Figure 9...
Embodiment 3
[0060] A trench type device includes a substrate 101, a body region 201 is disposed on the substrate 101, a second conductive layer 501 is disposed on the body region 201, and a first insulating layer 501 is disposed in the second conductive layer 501. A dielectric layer 301, a gate dielectric layer 302 is arranged under the first insulating dielectric layer 301, a second insulating dielectric layer 303 is arranged under the gate dielectric layer 302, the first insulating dielectric layer 301, the gate dielectric layer 302 and the first insulating dielectric layer 302 The two insulating dielectric layers 303 are connected, the gate dielectric layer 302 is located in the body region 201, the second insulating dielectric layer 303 is located in the substrate 101, and the gate dielectric layer 302 and the second insulating dielectric layer 303 are provided with The first conductive layer 401 , the depth of the first conductive layer 401 is not less than the depth of the body regio...
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