Solid-state imaging device, driving method of solid-state imaging device, and electronic device

A camera device, solid-state technology, applied in TV, circuit, color TV, etc., can solve the problem of not being able to read the global shutter, and achieve the effects of large dynamic range, expanded effective pixel area, and high frame rate

Active Publication Date: 2022-04-29
普里露尼库斯新加坡私人有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, this type of CMOS image sensor can transmit signals at high speed, but has the disadvantage of not being able to read the global shutter (global shutter)

Method used

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  • Solid-state imaging device, driving method of solid-state imaging device, and electronic device
  • Solid-state imaging device, driving method of solid-state imaging device, and electronic device
  • Solid-state imaging device, driving method of solid-state imaging device, and electronic device

Examples

Experimental program
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Effect test

no. 1 approach

[0073] figure 1 It is a block diagram showing a configuration example of the solid-state imaging device according to the first embodiment of the present invention.

[0074] In the present embodiment, the solid-state imaging device 10 is constituted by, for example, a CMOS image sensor including digital pixels (Digital Pixels) as pixels.

[0075] like figure 1 As shown, this solid-state imaging device 10 includes a pixel unit 20 as an imaging unit, a vertical scanning circuit (row scanning circuit) 30 , an output circuit 40 , and a timing control circuit 50 as main constituent elements.

[0076] Among these components, for example, the vertical scanning circuit 30 , the output circuit 40 , and the timing control circuit 50 constitute a pixel signal reading unit 60 .

[0077] In the first embodiment, the solid-state imaging device 10 includes, as digital pixels, a photoelectric conversion reading unit, an AD (analog-to-digital) conversion unit, and a memory unit in the pixel u...

no. 2 approach

[0388] Figure 30 It is a diagram for explaining the solid-state imaging device according to the second embodiment of the present invention, and is a diagram showing an example of selection processing between the time stamp ADC mode operation and the linear ADC mode operation.

[0389] The difference between the solid-state imaging device 10A of the second embodiment and the solid-state imaging device 10 of the first embodiment is as follows.

[0390] In the solid-state imaging device 10 according to the first embodiment, the time stamp (TS) ADC mode operation and the linear (Lin) ADC mode operation are continuously performed.

[0391] In contrast, in the solid-state imaging device 10A according to the second embodiment, it is possible to selectively perform a time stamp (TS) ADC mode operation and a linear (Lin) ADC mode operation according to illuminance.

[0392] exist Figure 21 In the example of , in the case of normal illuminance (ST51), the time stamp ADC mode operati...

no. 3 approach

[0397] Figure 31 It is a diagram showing a configuration example of a pixel of a solid-state imaging device according to a third embodiment of the present invention.

[0398] The difference between the solid-state imaging device 10B of the third embodiment and the solid-state imaging device 10 of the first embodiment is as follows.

[0399] In the solid-state imaging device 10B according to the third embodiment, the current transistor IC1-Tr as a current source is arranged not on the first substrate 110 side, but on the input of the AD converter 220 on the second substrate 120 side, for example. side.

[0400] According to the third embodiment, the same effects as those of the first embodiment can be obtained.

[0401] The solid-state imaging devices 10 , 10A, and 10B described above can be applied as imaging devices to digital cameras or video cameras, portable terminals, or electronic equipment such as monitoring cameras and medical endoscope cameras.

[0402] Figure 3...

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Abstract

The present invention provides a solid-state imaging device, a driving method of the solid-state imaging device, and an electronic device capable of substantially realizing a large dynamic range and a high frame rate and efficiently accessing a memory. The comparator 221 may perform a first comparison process of outputting a digitized first comparison result signal corresponding to the overflow charge overflowed from PD1 to FD1 during the accumulation period, compared with the accumulated charge of PD1 transferred to FD1 during the transfer period. In the second comparison process corresponding to the output of the digitized second comparison result signal, the digitized third comparison result signal output corresponding to the accumulated charge of PD1 and the accumulated charge of the charge accumulation part transferred to FD1 during the transfer period is the second comparison process. Three comparison processes, and the memory control unit 240 controls whether to write data corresponding to the third comparison result signal into the memory unit 230 according to the states of the first and second comparison result signals.

Description

technical field [0001] The present invention relates to a solid-state imaging device, a driving method of the solid-state imaging device, and electronic equipment. Background technique [0002] A Complementary Metal Oxide Semiconductor (CMOS) image sensor has been put into practical use as a solid-state imaging device (image sensor) using a photoelectric conversion element that detects light and generates charges. [0003] CMOS image sensors are widely used as a part of various electronic devices such as digital cameras, video cameras, surveillance cameras, medical endoscopes, personal computers (PCs), mobile phones and other portable terminal devices (mobile devices). [0004] The CMOS image sensor has an FD amplifier including a photodiode (photoelectric conversion element) and a floating diffusion layer (FD: Floating Diffusion, floating diffusion layer) in each pixel. The mainstream reading type of the CMOS image sensor is column-parallel output Type, that is, select a c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/374H04N5/3745H04N5/378
CPCH04N25/77H04N25/76H04N25/75H04N25/59H04N25/772H04N25/79H01L27/14612H01L27/14638H01L27/14643
Inventor 盛一也大高俊德高柳功
Owner 普里露尼库斯新加坡私人有限公司
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