Solid-state imaging device, driving method of solid-state imaging device, and electronic device
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- 普里露尼库斯新加坡私人有限公司
- Publication Date
- 2022-04-29
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Abstract
Description
technical field
[0001] The present invention relates to a solid-state imaging device, a driving method of the solid-state imaging device, and electronic equipment. Background technique
[0002] A Complementary Metal Oxide Semiconductor (CMOS) image sensor has been put into practical use as a solid-state imaging device (image sensor) using a photoelectric conversion element that detects light and generates charges.
[0003] CMOS image sensors are widely used as a part of various electronic devices such as digital cameras, video cameras, surveillance cameras, medical endoscopes, personal computers (PCs), mobile phones and other portable terminal devices (mobile devices).
[0004] The CMOS image sensor has an FD amplifier including a photodiode (photoelectric conversion element) and a floating diffusion layer (FD: Floating Diffusion, floating diffusion layer) in each pixel. The mainstream reading type of the CMOS image sensor is column-parallel output Type, that is, select a c...