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IGBT device open circuit and short circuit detection method and system and storage medium

A short-circuit detection and device technology, applied in the direction of single semiconductor device testing, instrumentation, measuring electricity, etc., can solve the problems of high difficulty of IGBT devices, low fault location efficiency, and inability to detect short-circuit and open-circuit faults for fault analysts. The effect of fault location efficiency

Pending Publication Date: 2020-07-10
广东芯聚能半导体有限公司
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Problems solved by technology

[0003] At present, the research based on IGBT short-circuit and open-circuit faults is based on the internal detection of IGBT, which can only judge the short-circuit and open-circuit faults inside the IGBT, but cannot detect the short-circuit and open-circuit faults in the circuit connected to the IGBT, resulting in It is difficult for fault analysts to locate faults in IGBT device circuits, resulting in low fault location efficiency

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  • IGBT device open circuit and short circuit detection method and system and storage medium
  • IGBT device open circuit and short circuit detection method and system and storage medium

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Embodiment Construction

[0039] The idea, specific structure and technical effects of the present invention will be clearly and completely described below in conjunction with the embodiments and accompanying drawings, so as to fully understand the purpose, scheme and effect of the present invention.

[0040] The embodiment of the present invention provides a kind of IGBT device open circuit and short circuit detection method, refer to figure 1 , including the following steps:

[0041] S1. Obtain the electrical parameters of the IGBT device;

[0042] S2. Judging a short-circuit fault outside the IGBT device according to the electrical parameters;

[0043] S3. Judging an open-circuit fault outside the IGBT device according to the electrical parameters.

[0044] Specifically, the electrical parameter is a parameter representing the electrical performance of the IGBT device. In this embodiment, the electrical parameter includes a threshold voltage, a standard threshold voltage, a breakdown voltage, a st...

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Abstract

The invention discloses an IGBT device open circuit and short circuit detection method and system, and a storage medium. The method comprises the following steps: obtaining electrical parameters of anIGBT device; judging a short-circuit fault outside the IGBT device according to the electrical parameters; and judging an open-circuit fault outside the IGBT device according to the electrical parameters. According to the invention, the short-circuit and open-circuit faults of the IGBT external circuit are judged by measuring the electrical parameters of the IGBT, so that the fault analysis personnel can locate the fault more quickly according to the analysis result, and the fault locating efficiency is improved. The method and the system can be widely applied to the technical field of IGBT detection.

Description

technical field [0001] The invention relates to the technical field of IGBT detection, in particular to an IGBT device open circuit and short circuit detection method, system and storage medium. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor), or Insulated Gate Bipolar Transistor, is a composite full-control voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor). Take an N-channel enhancement type insulated gate bipolar transistor as an example, the N+ region is called the source region, and the electrode attached to it is called the source. The N+ region is called the drain region. The control area of ​​the device is the gate area, and the electrode attached to it is called the gate. The channel is formed close to the gate boundary. The P-type region between the drain and the source includes P+ and P-regions. The channel is formed in this region, which is called the subchannel...

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Application Information

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IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2608
Inventor 李博强韩聪
Owner 广东芯聚能半导体有限公司
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