A production process of a thermopile-based wireless temperature sensor

Abstract

A production process of a thermopile-based wireless temperature sensor of the present invention is characterized in that the specific steps are as follows: Step 1, growing silicon nitride on the upper and lower sides of the substrate; Step 2, growing polysilicon, injecting boron, and annealing; Step 3, photolithography In the first version, four rows of polysilicon strip groups are formed, and the four rows of polysilicon strip groups form a zigzag structure. Each row of polysilicon strip groups includes multiple polysilicon strips arranged side by side; step 4, sputtering metal, photolithography second version, wet etching Etching metal; step five, passivation treatment, third edition of photolithography; step six, sputtering titanium gold, peeling off, and forming a reflective layer on the cold end; step seven, wet etching, etching out the window. The invention obtains a relatively stable dielectric film support scheme, significantly improves the yield, and the performance of the thermopile infrared detector obtained through the process is significantly improved compared with the traditional thermopile detector.

Description

technical field [0001] The invention belongs to the technical field of detectors, and relates to the process design of thermopile infrared detectors. The intensity of detected infrared radiation is converted into electrical signals through the Seebeck effect of semiconductor materials for application. Background technique [0002] Infrared detectors can detect electromagnetic waves in the infrared region, with a wavelength range of 0.75 to 1000 microns, and have a wide range of civilian and military values. The infrared thermopile detector uses the Seebeck effect to convert the infrared radiation signal into an electrical signal output. Compared with the general infrared detector, the advantage of the micromechanical infrared thermopile detector is that it is small in size, light in weight, and can work at room temperature; It has high sensitivity and very wide frequency spectrum response; it is compatible with standard IC process, low in cost, and suitable for mass producti...

AI Technical Summary

Problems solved by technology

From a process point of view, the preparation of the closed-membrane detector is the easiest, and the preparation process of the cantilever beam structure is the most complicated.

[0011] Although the thermopile infrared detectors with closed film structure on the market are simple in structure, the yield rate is low, and the detector with cantilever beam structure will increase the process cost and design difficulty a lot. In the thermopile infrared detector with closed film structure It is a main direction of the current design to obtain higher performance without increasing the process cost by improving the process on the detector.

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