The invention provides a MIM enhanced controllable mid-
infrared photoelectric
detector, wherein the upper surface of the substrate is separated into source / drain electrodes on both sides and a
metal back reflection layer in the middle by a
hexagonal boron nitride layer, the source / drain electrodes are
titanium-gold
metal composite electrodes, the lower layer is
titanium as an adhesion layer, and the upper layer is gold; the
metal back reflection layer is completely covered by the
hexagonal boron nitride layer; a
molybdenum disulfide layer and a black
arsenic phosphide layer form a b‑AsP / MoS2
heterojunction, the overlapping part of the two
layers is on the metal back reflection layer, and the
molybdenum disulfide layer and the black
arsenic phosphide layer respectively form ohmic contacts with the metal
composite electrode on one side, and a MIM
grating is integrated on the b‑AsP / MoS2
heterojunction junction region, and a transverse
resonance mode is formed between the metal back reflection layer and the periodic
metal grating, so that the light absorption of the b‑AsP / MoS2
heterojunction is significantly increased in the mid-
wave band range after 4μm in the mid-wave
infrared, thereby enhancing absorption control.