Flexible gas sensitive sensor based on gallium oxide/zinc gallate hetero-junction nano-array and preparation method thereof

A gas sensor and nano-array technology, which is applied in the field of gas sensing, can solve the problems of weak substrate bonding, poor stability, and difficult electrode production, and achieve the effects of rapid separation, stable performance, and improved gas sensing characteristics

Active Publication Date: 2018-12-11
东营睿港招商服务有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, little is known about flexible β-Ga 2 o 3 According to reports on flexible gas sensors, although there have been experimental reports (Chinese patent CN201710012296.2) on solar-blind ultraviolet photodetectors based on flexible gallium oxide nanobelts, such detectors are based on the transfer of previously synthesized gallium oxide nanobelts. On a flexible substrate, there are disadvantages such as difficult electrode fabrication, poor stability, and weak bonding with the substrate.

Method used

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  • Flexible gas sensitive sensor based on gallium oxide/zinc gallate hetero-junction nano-array and preparation method thereof
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  • Flexible gas sensitive sensor based on gallium oxide/zinc gallate hetero-junction nano-array and preparation method thereof

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Embodiment 1

[0035] A method for preparing a flexible gas sensor based on a gallium oxide / zinc gallate heterojunction nanoarray, comprising the following steps:

[0036] (1) Clean the glass fiber cloth substrate. The cleaning process is as follows: soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside;

[0037] (2) Combine ZnO and Ga 2 o 3 The targets are respectively placed on the target stage of the magnetron sputtering deposition system, and the glass fiber cloth substrate processed in step (1) is fixed on the sample holder and put into the vacuum chamber;

[0038] (3) Preparation of ZnO thin film: vacuumize the chamber, adjust the pressure in the vacuum chamber, feed argon gas, heat the glass fiber cloth substrate, deposit a layer of ZnO thin film by magnetron sputtering, take it out for use, wherein , the distance between the ZnO target and the glass...

Embodiment 2

[0047] A method for preparing a flexible gas sensor based on a gallium oxide / zinc gallate heterojunction nanoarray, comprising the following steps:

[0048] (1) Clean the glass fiber cloth substrate. The cleaning process is as follows: soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside;

[0049] (2) Combine ZnO and Ga 2 o 3 The targets are respectively placed on the target stage of the magnetron sputtering deposition system, and the glass fiber cloth substrate processed in step (1) is fixed on the sample holder and put into the vacuum chamber;

[0050] (3) Preparation of ZnO thin film: vacuumize the chamber, adjust the pressure in the vacuum chamber, feed argon gas, heat the glass fiber cloth substrate, deposit a layer of ZnO thin film by magnetron sputtering, take it out for use, wherein , the distance between the ZnO target and the glass...

Embodiment 3

[0056] A method for preparing a flexible gas sensor based on a gallium oxide / zinc gallate heterojunction nanoarray, comprising the following steps:

[0057] (1) Clean the glass fiber cloth substrate. The cleaning process is as follows: soak the substrate in acetone, ethanol, and deionized water for 10 minutes, then rinse it with deionized water after taking it out, and finally wash it with dry N 2 Blow dry and set aside;

[0058] (2) Combine ZnO and Ga 2 o 3 The targets are respectively placed on the target stage of the magnetron sputtering deposition system, and the glass fiber cloth substrate processed in step (1) is fixed on the sample holder and put into the vacuum chamber;

[0059] (3) Preparation of ZnO thin film: vacuumize the chamber, adjust the pressure in the vacuum chamber, feed argon gas, heat the glass fiber cloth substrate, deposit a layer of ZnO thin film by magnetron sputtering, take it out for use, wherein , the distance between the ZnO target and the glass...

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Abstract

The invention relates to a flexible gas sensitive sensor based on a gallium oxide/zinc gallate hetero-junction nano-array and a preparation method thereof. The flexible gas sensitive sensor comprisestwo Ti/Au (Titanium Gold) electrodes, a flexible glass fiber cloth substrate, a ZnGa2O4 film located on the flexible glass fiber cloth substrate, and a beta-Ga2O3 nano-column array located on the ZnGa2O4 film; the two Ti/Au electrodes are respectively located above the ZnGa2O4 film and the beta-Ga2O3 nano-column array; the gallium oxide/zinc gallate hetero-junction nano-array is formed by the ZnGa2O4 film and the beta-Ga2O3 nano-column array. The sensor provided by the invention is an MSSM type hetero-junction flexible gas sensitive sensor in a Ti/Au/beta-Ga2O3/ZnGa2O4/Ti/Au structure, has a three-dimensional space hetero-junction interface structure, is stable in gas sensitive characteristics, flexible and bendable and low in working temperature and power consumption, can be used for detection of flexible wearable ethanol gas, and has great application prospects in fields such as production and monitoring of industrial alcohol and detection of drunk driving.

Description

technical field [0001] The invention belongs to the field of gas sensing, and in particular relates to a flexible gas sensor based on a gallium oxide / zinc gallate heterojunction nanoarray and a preparation method thereof. technical background [0002] β-Ga 2 o 3 It is a wide bandgap semiconductor material (Eg=4.9eV), under high temperature conditions (550-600°C) for H 2 , CO, alkane reductivity and ethanol gas are sensitive, and its resistivity changes with the change of gas concentration. It is a good high-temperature semiconductor gas-sensing material. Due to β-Ga 2 o 3 The thin film needs to be synthesized at a high temperature of 700-800°C, and its gas sensing devices are all grown on rigid substrates, such as silicon wafers, sapphire and quartz substrates, etc. These devices cannot be bent, which limits the application range of the devices. At present, most of the flexible substrates are high-molecular compounds, which cannot withstand high temperatures. Therefore,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/127
Inventor 杨丽娜
Owner 东营睿港招商服务有限责任公司
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