A dynamic electrical stress applying device and testing method for a power semiconductor device

Abstract

The invention relates to a dynamic electrical stress application device for power semiconductor devices, comprising: a signal generator, an optocoupler protection module, a gate pulse drive module, a high-voltage control module and the n measured power semiconductor devices, wherein the signal generation The device, the optocoupler protection module, and the gate pulse drive module are sequentially connected to the gates of the n power semiconductor devices under test, and the high voltage control module is connected to the drains of the n power semiconductor devices under test. The source stages of the n tested power semiconductor devices are grounded. The invention also relates to a dynamic electrical stress test method for a power semiconductor device. The invention can simultaneously complete the application of dynamic electrical stress to one or more power semiconductor devices under test, realizes the photoelectric isolation between the signal generator and the high-voltage circuit through the optocoupler protection module, and facilitates the monitoring of the degradation parameters of the power semiconductor devices under test , improving the efficiency of hot-carrier reliability testing under dynamic electrical stress conditions.

Description

technical field [0001] The invention relates to reliability testing of power semiconductor devices, in particular to a device for applying dynamic electrical stress to power semiconductor devices, and to a method for testing dynamic electrical stress of power semiconductor devices, belonging to the technical field of integrated circuits. Background technique [0002] In semiconductor manufacturing, power semiconductor devices are generally not put into use immediately after they are produced, but the reliability and actual service life of the power semiconductor devices should be tested by using relevant reliability tests. Among them, the hot carrier injection (HCI) effect of power semiconductor devices is a very important reliability item of power semiconductor devices, which reflects the power semiconductor devices under high voltage conditions due to hot carrier injection. The electrical characteristics such as on-resistance and saturation current are degraded, shortening...

AI Technical Summary

Problems solved by technology

Among them, the hot carrier injection (Hot Carrier Injection, HCI) effect of power semiconductor devices is a very important reliability item of power semiconductor devices. The electrical characteristics such as on-resistance and saturation current degrade, shortening the life of the device

[0003] Since traditional HCI reliability tests are mainly aimed at low-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs), the corresponding test equipment can only provide static electrical stress

With the development of high-voltage power semiconductor technology, more and more high-voltage power semiconductor devices are designed and manufactured. Since high-voltage power semiconductor devices often work in a state of continuous switching, if only the method of increasing the stress voltage of high-voltage power semiconductor devices , high-voltage power semiconductor devices will fail too quickly due to heat accumulation, and normal reliability testing cannot be performed

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