Power semiconductor device dynamic electrical stress applying device and testing method

Abstract

The invention relates to a power semiconductor device dynamic electrical stress applying device. The device comprises a signal generator, an optocoupler protection module, a gate pulse driving module,a high-voltage control module and the n tested power semiconductor devices, wherein the signal generator, the optical coupler protection module and the gate pulse driving module are sequentially connected to the gates of the n tested power semiconductor devices in series; the high-voltage control module is connected with the drains of the n tested power semiconductor devices, and the sources of the n tested power semiconductor devices are grounded. The invention also relates to a power semiconductor device dynamic electrical stress test method. According to the invention, dynamic electrical stress can be applied to one or more tested power semiconductor devices at the same time; photoelectric isolation of the signal generator and a high-voltage circuit is realized through the optical coupler protection module, degradation parameters of a tested power semiconductor device are convenient to monitor, and the efficiency of hot carrier reliability test under a dynamic electrical stress condition is improved.

Description

technical field [0001] The invention relates to reliability testing of power semiconductor devices, in particular to a device for applying dynamic electrical stress to power semiconductor devices, and also to a testing method for dynamic electrical stress of power semiconductor devices, belonging to the technical field of integrated circuits. Background technique [0002] In semiconductor manufacturing, after the power semiconductor device is produced, it is generally not put into use immediately, but the reliability and actual service life of the power semiconductor device must be tested by using relevant reliability tests. Among them, the hot carrier injection (Hot Carrier Injection, HCI) effect of power semiconductor devices is a very important reliability item of power semiconductor devices. The on-resistance, saturation current and other electrical characteristics of the device are degraded, which shortens the life of the device. [0003] Since traditional HCI reliabil...

AI Technical Summary

Problems solved by technology

Among them, the hot carrier injection (Hot Carrier Injection, HCI) effect of power semiconductor devices is a very important reliability item of power semiconductor devices. The electrical characteristics such as on-resistance and saturation current degrade, shortening the life of the device

[0003] Since traditional HCI reliability tests are mainly aimed at low-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs), the corresponding test equipment can only provide static electrical stress

With the development of high-voltage power semiconductor technology, more and more high-voltage power semiconductor devices are designed and manufactured. Since high-voltage power semiconductor devices often work in a state of continuous switching, if only the method of increasing the stress voltage of high-voltage power semiconductor devices , high-voltage power semiconductor devices will fail too quickly due to heat accumulation, and normal reliability testing cannot be performed

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