Semiconductor detection device and detection method thereof
A detection device and detection method technology, applied in the direction of semiconductor/solid-state device testing/measurement, single semiconductor device test, measurement device, etc., can solve problems such as inability to meet detection requirements
Pending Publication Date: 2020-07-17
ZICHUANG NANJING TECH CO LTD
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Specifically, online quantitative detection is usually suitable for macroscopic physical defects, such as particles and pattern defects, etc. Once the detection requirements enter atomic-scale defects, online quantitative detection cannot meet the detection requirements
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[0053] As mentioned in the background art, improving the detection quality of real-time detection of atomic-level defects is one of the problems to be solved in the field of semiconductor yield detection.
[0054] In the development and production of advanced semiconductor manufacturing processes, in order to improve the detection quality of real-time detection of atomic-level defects caused by new materials and process flows, embodiments of the present invention provide a semiconductor detection device and detection method. In the semiconductor inspection device, corona spraying is performed on the surface of the wafer to be inspected by using a corona discharge system, which helps to measure the electrical properties of the material more comprehensively and enhance the signal strength that characterizes the properties of the material.
[0055] In order to make the above objects, features and advantages of the present invention more comprehensible, specific embodiments of the ...
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The invention discloses a semiconductor detection device and a detection method thereof. The semiconductor detection device comprises a wafer bearing device; a corona discharge system which is used for carrying out corona power injection on the surface of a to-be-detected wafer; a charge detection system which is used for detecting the charge quantity of positive ions or negative ions deposited onthe surface of the to-be-detected wafer; an incident light system which is used for emitting first incident light to the to-be-detected wafer, wherein the first incident light is reflected by the to-be-detected wafer to form first reflected light; an optical signal sorting system which is used for sorting non-linear optical signals from the first reflected light; and a control system which is used for acquiring the first defect information of the to-be-detected wafer. Charges are deposited on the surface of the to-be-detected wafer by adopting the corona discharge system, and controllable non-contact modulation of an electric field in a material is realized so that the electrical properties of the material, especially the properties sensitive to the internal electric field or energy bandbending, are measured more comprehensively. The signal intensity for characterizing the material properties can also be enhanced through the non-contact external electric field modulation under certain specific conditions.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor detection device and a detection method thereof. Background technique [0002] In the semiconductor manufacturing process, it is easy to cause a decrease in device yield due to defects in the process or materials, and lead to an increase in production costs. Existing conventional yield testing methods are divided into electrical testing and online quality testing. [0003] Among them, electrical inspection can be used to find defects that affect the electrical performance of the device. However, conventional electrical testing can only be applied to back-end (BEOL, Back End Of Line) or packaging testing, and cannot detect and solve problems in real time during the manufacturing process. That is to say, the period of electrical inspection from the occurrence of a problem to its ability to be detected is too long, which is likely to cause waste...
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IPC IPC(8): H01L21/66G01R31/12G01R31/26
CPCG01R31/129G01R31/2601H01L22/14H01L22/24
Inventor 李海鹏张宇啸任文墨
Owner ZICHUANG NANJING TECH CO LTD