Semiconductor devices

Abstract

The invention provides a semiconductor device. The semiconductor device includes a channel layer located on a substrate, the channel layer including a conductive oxide, a gate structure located on thechannel layer; a gate structure including a gate electrode and gate spacers located on both sidewalls of the gate electrode, and source and drain regions located on both sides of the gate structure in recess regions having a first height from a top surface of the channel layer. The source and drain regions are configured to apply tensile stress to a portion of the channel layer located under thegate structure.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2019-0003291 filed with the Korean Intellectual Property Office on January 10, 2019, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0002] The inventive concept relates to a semiconductor device, and more particularly, to a semiconductor device including an oxide channel layer. Background technique [0003] As electronic products tend to be lightweight, thin, and miniaturized, demands for highly integrated semiconductor devices have increased. As semiconductor devices are reduced in size, components included in transistors are also reduced in size. Therefore, leakage current occurs due to the short channel effect. Therefore, it is necessary to reduce the leakage current of transistors and improve the reliability of semiconductor devices. Contents of the invention [0004] The inventive concepts provide a semiconductor device having both low leaka...

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Problems solved by technology

Therefore, leakage current occurs due to the short channel effect

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