Lateral field FBAR structure and thin film transfer manufacturing method thereof

Abstract

The invention discloses a lateral field FBAR structure and a thin film transfer manufacturing method thereof. The structure comprises a substrate, a bonding layer, a piezoelectric layer and an electrode. Specifically, an electrode layer and a piezoelectric layer are sequentially grown on one silicon substrate, the bonding layer is grown on the piezoelectric layer, cavity etching is performed on the other silicon substrate, the bonding layer is grown, wafers are filled with sacrificial layers, planarization processing is performed, the two wafers are aligned and bonded, silicon with the grown electrode layer is removed, the electrode is patterned, and finally the sacrificial layers are released. According to the lateral field FBAR structure and the manufacturing method thereof, thin film transfer is realized through bonding so that the piezoelectric layer and the electrode layer are grown on the silicon substrate, the problem that the quality of a traditional thin film growing on an incomplete plane after chemical mechanical polishing is reduced is solved, on the other hand, the bonding yield can be improved relative to bonding with a cavity through solid bonding, and the FBAR can be manufactured and applied to sensors and filters and has good performance in specific application.

Description

technical field [0001] The invention relates to the technical field of MEMS devices, in particular to a lateral field FBAR structure and a film transfer manufacturing method thereof. Background technique [0002] In 2001, the FBAR-based duplexer was successfully developed and applied, and in 2002, it was commercialized and popularized. The research of FBAR entered a wider and deeper level. [0003] Compared with dielectric filters and surface acoustic wave filters, the advantages of thin film bulk acoustic wave filters are that they can have better performance, smaller size, and better compatibility, with promising development and application prospects. With the advent of a new generation of communication technology, the role and demand of FBAR filters have become more prominent. In other application fields, it is also used more, such as oscillators and sensors. From this point of view, great achievements have been made in the development of FBAR technology, and the applic...

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Problems solved by technology

In this way, if the equipment does not meet the precision requirements and the process is not perfect, the formed plane will have steps, and if the film layer is grown on it, the quality will decline.

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