The invention discloses a double-groove super junction structure and a manufacturing method thereof, the double-groove super junction structure comprises a plurality of MOS cells which are connected in parallel, and each MOS
cell comprises a drain
electrode, an upper
metal source
electrode, a grid
electrode, a
semiconductor epitaxial layer, a substrate layer, a P well layer and an N well layer; a groove is formed between adjacent MOS cells and in the middle of the heavily doped P well layer I through
etching, an
oxide layer is deposited at the bottom of the groove, a side
metal source electrode is arranged on the surface of the
oxide layer, and the top of the side
metal source electrode is in contact with the upper metal source electrode; the side surface of the side metal source is in
ohmic contact with the N well layer, the lightly doped P well layer I and the heavily doped P well layer I; the grid electrode is a longitudinal groove type grid electrode and is arranged between the two N well
layers of the single MOS
cell, and the grid electrode is connected with the N well
layers, the first lightly-doped P well layer and the
diffusion layer in an isolated mode through a grid
oxide layer. According to the invention, the injection depth of the heavily doped P well layer I is increased through the groove, and the (11-20) surface channel is adopted, so that the interface
state density is greatly reduced, and the overall size of the device is reduced.