The Establishment Method of sic MOSFET Short-Circuit Simulation Model

Abstract

The invention discloses a method for establishing a short-circuit simulation model of a SiC MOSFET, wherein the method includes: acquiring static characteristics, transient thermal impedance and short-circuit waveform of the SiC MOSFET; establishing a thermal model according to the transient thermal impedance, and combining the thermal model and the short-circuit The junction temperature characteristics of the SiC MOSFET when short-circuited are obtained from the waveform; the leakage current waveform and the channel current waveform are obtained according to the drain-source current waveform when the short-circuit duration gradually increases; the channel current model is established according to the static characteristics and junction temperature characteristics of the SiC MOSFET; The drain-source leakage current model is established based on the junction temperature characteristics of the SiC MOSFET; the short-circuit simulation model of the SiC MOSFET is obtained according to the channel current model and the leakage current model. The embodiment of the present invention can obtain a SiC MOSFET simulation model applicable to normal operating conditions and short-circuit conditions, which can be better applied to power electronic circuit simulation, provides guidance for short-circuit protection circuit design of driving circuits, and reduces circuit design costs.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a method for establishing a short-circuit simulation model of a SiC MOSFET. Background technique [0002] Currently, the design of SiC MOSFET-based converters is challenging due to the small die area, high current density, and short short-circuit withstand time of SiC MOSFETs. However, the existing power electronic circuit simulation SiC MOSFET models are almost all based on normal operating conditions and cannot correctly reflect the short-circuit behavior of SiC MOSFETs. Therefore, in order to predict the impact of short-circuit conditions on power conversion systems, a SiC MOSFET model that can be used for short-circuit simulation is urgently needed to reduce circuit design costs and provide guidance for the design of fault protection and drive circuits. [0003] In related art, through short-circuit experiments and numerical analysis, the short-circuit performance ...

AI Technical Summary

Problems solved by technology

Although the physical model is very accurate and can reflect the physical operation mechanism of SiC MOSFET, it is not suitable for power electronic circuit simulation due to the large number of model parameters, difficulty in obtaining, and long simulation time.

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