Method for improving utilization rate of wafer probe station
A technology of probe station and utilization rate, which is applied in the direction of electrical components, electric solid-state devices, circuits, etc., can solve the problems of reduced utilization rate of wafer test machines, incompatibility with traditional wafer testing, and increased cost of wafer testing, etc. Achieve the effects of reducing the risk of wafer damage, preventing wafer warping, and improving strength
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Embodiment 1
[0067] In order to overcome the problems of low utilization rate of wafer testing machine and increased test cost in the prior art, this embodiment provides a method for improving the utilization rate of wafer probe station, such as image 3 As shown, the method includes the following steps:
[0068] A wafer is provided, including a front side of the wafer and a back side of the wafer, and the wafer is subjected to back grinding and thinning treatment and back gold treatment;
[0069] A metal patch is attached to at least a partial area of the back of the wafer, and the center of the metal patch coincides with the center of the wafer; wherein, the back of the wafer to which the metal patch is attached presents a plane as a whole Mode;
[0070] placing the wafer attached with the metal patch on the probe station for testing.
[0071] In a preferred embodiment of this embodiment, the metal patch includes a disc-shaped metal patch, and the metal patch is selected from any one...
Embodiment 2
[0083] This embodiment also provides a method for improving the utilization rate of the wafer probe station, and the similarities with Embodiment 1 will not be repeated, and the difference lies in:
[0084] In this example, if Figure 7 As shown, the provided wafer 70 includes a wafer front 701 and a wafer back 702. The non-taiko process is used to grind and thin the wafer back 702 to the required thickness. The wafer back 702 is attached with a metal sticker Sheet 704. In this embodiment, the metal patch 704 covers the entire wafer backside 702 , the diameter of the metal patch is between 200 mm and 300 mm, and the thickness of the metal patch is between 0.3 mm and 0.8 mm.
[0085] In a further embodiment of this embodiment, the wafer 70 includes 8" and 12" wafers, and in the 8" wafer 70, the diameter of the metal patch 704 is about 200 mm, and the thickness is between 0.3 mm˜0.8 mm. In the 12” wafer 70 , the metal patch 704 has a diameter of about 300 mm and a thickness of...
Embodiment 3
[0090] This embodiment also provides a method for improving the utilization rate of the wafer probe station, and the similarities with Embodiment 1 or 2 will not be repeated, and the difference lies in:
[0091] After the test is completed, the wafer attached with the metal patch is cut and packaged.
[0092] Before the wafer is cut and packaged, the backside grinding and thinning of the wafer attached with the metal patch can also be performed.
[0093] In a preferred embodiment of this embodiment, as Figure 8 As shown, the wafer can be diced together with the metal patch on its back to form independent dies 30 , and then the independent dies 30 can be packaged.
[0094] In another preferred embodiment of this embodiment, with Figure 7 The wafer shown is taken as an example, and the wafer and the metal patch 704 on the back of the wafer are cut. However, in this preferred embodiment, the wafer and the metal patch 704 are cut in the form of a combination of multiple crysta...
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