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Failure Analysis Methods for Semiconductor Devices

A failure analysis and semiconductor technology, applied in the field of failure analysis of semiconductor devices, can solve problems such as improvement of products that cannot fail, failure to access the interior, and failure to find the cause of failure, etc., to achieve the effect of improving failure products

Active Publication Date: 2022-05-31
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the actual production process, due to different product designs, it often happens that the electrical test program used in conjunction with the EMMI machine cannot access the inside of a failed word line or bit line, resulting in the failure of the EMMI machine to catch The hot spot is taken, so that the failure cause cannot be found through further physical failure analysis, and the failed product cannot be improved.

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  • Failure Analysis Methods for Semiconductor Devices
  • Failure Analysis Methods for Semiconductor Devices
  • Failure Analysis Methods for Semiconductor Devices

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Embodiment Construction

[0031] In order to make the objects, advantages and features of the present invention clearer, the following are combined with the appendix Figures 2 to 3c The failure analysis method of the semiconductor device proposed by the present invention is further described in detail. It should be noted that, the accompanying drawings are all in a very simplified form and in inaccurate scales, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention.

[0032] An embodiment of the present invention provides a method for failure analysis of a semiconductor device, refer to figure 2 , figure 2 It is a flowchart of a failure analysis method of a semiconductor device according to an embodiment of the present invention, and the failure analysis method of a semiconductor device includes:

[0033] Step S1, providing a semiconductor device, the semiconductor device comprising a plurality of conductive lines;

[0034] Step S2, c...

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Abstract

The present invention provides a failure analysis method for a semiconductor device. The failure analysis method for a semiconductor device includes: performing an electrical failure analysis on the semiconductor device to locate a certain failed conductive line; Perform hot spot capture on the failed conductive line to locate the hot spot; if the hot spot in the certain failed conductive line is not captured, repair the certain failed conductive line to fix the certain failed conductive line A failed conductive circuit is exposed, and then the hot spot in the exposed failed conductive circuit is captured for the next step of physical failure analysis. The technical solution of the present invention enables hot spots to be caught even when product design changes, thereby enabling fast and accurate finding of defect locations and analysis of failure causes, thereby realizing improvement of failed products.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a failure analysis method of a semiconductor device. Background technique [0002] Electrical Failure Analysis (EFA, Electrical Failure Analysis) is a failure analysis based on electrical measurement, and its main purpose is to determine the test structure that fails in the chip. Electrical failure analysis is based on functional testing. By providing electrical test signals for the chip and analyzing whether the electrical test results conform to the theoretical analysis, the faulty test structure is determined. Physical Failure Analysis (PFA, Physical Failure Analysis) is to obtain the line width, thickness, composition and other values ​​of the test structure in the test chip according to the requirements. In many cases, it is necessary to observe the location of the defect by slicing to determine the specific location of the defect. . [0003] Among them, whe...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/50G01R31/26G01R31/52G01N1/28G01N23/04G01N23/2005G01B15/04
CPCG11C29/50G01R31/2601G01R31/2642G01N1/286G01N23/04G01N23/2005G01B15/04G11C2029/5004G11C2029/5006G01N2001/2866G01N2001/2873
Inventor 李桂花高慧敏
Owner WUHAN XINXIN SEMICON MFG CO LTD