Device and method for improving epitaxial wafer sliding

Abstract

The invention provides a device and a method for improving epitaxial wafer sliding, and belongs to the technical field of epitaxial wafer manufacturing. The device comprises a base, wherein the upperend surface of the base is provided with a wafer carrying groove, a mechanical arm disc is arranged above the base, an air suction channel used for adsorbing the epitaxial wafer through negative pressure is formed in the mechanical arm disc, an air filling channel used for filling air into the mechanical arm disc is further formed in the mechanical arm disc, and the epitaxial wafer falls into thewafer carrying groove under the action of the pressure of the air filled into the air filling channel. According to the invention, the method for improving epitaxial wafer sliding adopts the device; and with the device and the method, the friction force between the epitaxial wafer and the wafer carrying groove is increased, the time for exhausting gas in the epitaxial wafer and the wafer carryinggroove is shortened, the epitaxial wafer is prevented from sliding in the wafer carrying groove, and the uniformity of the thickness and the resistivity of the epitaxial wafer is improved.

Description

technical field [0001] The invention belongs to the technical field of epitaxial wafer manufacturing, and more specifically relates to a device and method for improving an epitaxial wafer slide. Background technique [0002] In the manufacture of semiconductor chips, silicon epitaxial wafers play an important role. In actual production, chemical vapor deposition technology is widely used in the manufacture of silicon epitaxial wafers, and the epitaxial furnace is the main equipment for manufacturing epitaxial wafers. [0003] At present, in the process of growing epitaxial wafers in an epitaxial furnace, the epitaxial furnace uses a manipulator to automatically load silicon wafers into the slide slot of the base, and a layer of single crystal will be deposited on the surface of the silicon wafer during the movement of the silicon wafer to the slide slot. Silicon, this layer of monocrystalline silicon is the epitaxial wafer. When the epitaxial wafer is separated from the man...

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Problems solved by technology

[0004] The object of the present invention is to provide a device and method for improving the slide of the epitaxial wafer, aiming to solve the problem of poor uniformity of thickness and resistivity of the epitaxial wafer caused by the sliding of the epitaxial wafer in the slot when the epitaxial wafer is in contact with the surface of the slot.

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